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Effect of the surface and barrier defects on the AlGaN/GaN HEMT low-frequency noise performance
by
Vertiatchikh, A.V.
,
Eastman, L.F.
Published in
IEEE electron device letters
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High-power monolithic AlGaN/GaN HEMT oscillator
by
Kaper, V.S.
,
Tilak, V.
,
Hyungtak Kim
,
Vertiatchikh, A.V.
,
Thompson, R.M.
,
Prunty, T.R.
,
Eastman, L.F.
,
Shealy, J.R.
Published in
IEEE journal of solid-state circuits
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Ieee Electron Device Letters
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Ieee Journal Of Solid-State Circuits
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Aluminum Gallium Nitride
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Aluminum Gallium Nitrides
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Engineering
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Engineering, Electrical & Electronic
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Gallium Nitride
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Gallium Nitrides
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Hemts
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Noise
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Science & Technology
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Technology
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1F Noise
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Algan/Gan
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Algan/Gan Hemt
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Barriers
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Coplanar Transmission Lines
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Coplanar Waveguides
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High Electron Mobility Transistor
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High Electron Mobility Transistors
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