A review of thermal properties of CVD diamond films by Zhang, Chunyan, Vispute, Ratnakar D., Fu, Kun, Ni, Chaoying

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Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1−xO alloy films by Choopun, S., Vispute, R. D., Yang, W., Sharma, R. P., Venkatesan, T., Shen, H.

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Compositionally-tuned epitaxial cubic MgxZn1−xO on Si(100) for deep ultraviolet photodetectors by Yang, W., Hullavarad, S. S., Nagaraj, B., Takeuchi, I., Sharma, R. P., Venkatesan, T., Vispute, R. D., Shen, H.

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Monolithic multichannel ultraviolet detector arrays and continuous phase evolution in MgxZn1−xO composition spreads by Takeuchi, I., Yang, W., Chang, K.-S., Aronova, M. A., Venkatesan, T., Vispute, R. D., Bendersky, L. A.

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Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films by Yang, W., Vispute, R. D., Choopun, S., Sharma, R. P., Venkatesan, T., Shen, H.

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Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire by Choopun, S., Vispute, R. D., Noch, W., Balsamo, A., Sharma, R. P., Venkatesan, T., Iliadis, A., Look, D. C.

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Niobium doped TiO2: Intrinsic transparent metallic anatase versus highly resistive rutile phase by Zhang, S. X., Kundaliya, D. C., Yu, W., Dhar, S., Young, S. Y., Salamanca-Riba, L. G., Ogale, S. B., Vispute, R. D., Venkatesan, T.

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Electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au multilayer Ohmic contacts to n-type GaN by Motayed, Abhishek, Bathe, Ravi, Wood, Mark C., Diouf, Ousmane S., Vispute, R. D., Mohammad, S. Noor

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Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices by Vispute, R. D., Talyansky, V., Choopun, S., Sharma, R. P., Venkatesan, T., He, M., Tang, X., Halpern, J. B., Spencer, M. G., Li, Y. X., Salamanca-Riba, L. G., Iliadis, A. A., Jones, K. A.

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Observation of resonant tunneling action in ZnO/Zn0.8Mg0.2O devices by Krishnamoorthy, Soumya, Iliadis, Agis A, Inumpudi, Aravind, Choopun, Supab, Vispute, Ratnakar D, Venkatesan, Tirumalai

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High mobility crystalline silicon film growth below 600 °C from an Au-Si eutectic melt for TFTs by Rajbhandari, Pravakar Prasad, Dhakal, Tara P., Vispute, Ratnakar D., Chaudhari, Ashok

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Compositional origin of surface roughness variations in air-annealed ZnO single crystals by Elizabeth Pugel, D., Vispute, R.D., Hullavarad, S.S., Venkatesan, T., Varughese, B.

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Extremely highly textured MgO [111] crystalline films on soda-lime glass by E-beam by Chaudhari, Ashok, Vispute, R.D., Efstathiadis, Harry

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Highly textured silicon [111] crystalline thin-film on buffered soda-lime glass by e-beam evaporation by McMahon, Shane, Chaudhari, Ashok, Vispute, R.D., Zhao, Zhouying, Efstathiadis, Harry

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High quality crystalline ZnO buffer layers on sapphire (001) by pulsed laser deposition for III–V nitrides by Vispute, R. D., Talyansky, V., Trajanovic, Z., Choopun, S., Downes, M., Sharma, R. P., Venkatesan, T., Woods, M. C., Lareau, R. T., Jones, K. A., Iliadis, A. A.

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Crystalline Al2O3 on buffered soda-lime glass by e-beam by Chaudhari, Ashok, Vispute, R.D., Murray, Thomas M., Efstathiadis, Harry

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Realization of Mg ( x = 0.15 ) Zn ( 1 − x = 0.85 ) O -based metal-semiconductor-metal UV detector on quartz and sapphire by Hullavarad, S. S., Dhar, S., Varughese, B., Takeuchi, I., Venkatesan, T., Vispute, R. D.

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Growth of GaN films on PLD-deposited TaC substrates by Kirchner, K.W., Derenge, M.A., Zheleva, T.S., Vispute, R.D., Jones, K.A.

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High quality epitaxial aluminum nitride layers on sapphire by pulsed laser deposition by Vispute, R. D., Wu, Hong, Narayan, J.

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Homo- and hetero-epitaxial growth of hexagonal and cubic MgxZn1−x O alloy thin films by pulsed laser deposition technique by Hullavarad, S S, Hullavarad, N V, Pugel, D E, Dhar, S, Takeuchi, I, Venkatesan, T, Vispute, R D

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