A small-signal equivalent circuit for the collector-up InGaAs/InAlAs/InP heterojunction bipolar transistor by Meskoob, B., Prasad, S., Vai, M., Fonstad, C.G., Vlcek, J.C., Sato, H., Bulutay, C.

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Bias-dependence of the intrinsic element values of InGaAs/InAlAs/InP inverted heterojunction bipolar transistor by Meskoob, B., Prasad, S., Vai, M., Vlcek, J.C., Sato, H., Fonstad, C.G.

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InGaAs/InAlAs/InP collector-up microwave heterojunction bipolar transistors by Sato, H., Vlcek, J.C., Fonstad, C.G., Meskoob, B., Prasad, S.

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(In,Ga)As/InP n-p-n heterojunction bipolar transistors grown by liquid phase epitaxy with high DC current gain by Kanbe, H., Vlcek, J.C., Fonstad, C.G.

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High current density emitter-down InGaAlAs heterojunction bipolar transistors by Sato, H., Vlcek, J.C., Fonstad, C.G.

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VA-5 InGaAs/InP heterojunction bipolar transistors for digital integrated circuits by Masum Choudhury, A.N.M., Tabatabaie-Alavi, K., Vlcek, J.C., Kanbe, H., Fonstad, C.G.

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Strong intersubband absorption in a single doped pseudomorphic InAs/In/sub 0.53/Ga/sub 0.47/As/AlAs quantum well on InP by Peng, L.H., Broekaert, T.P., Choi, W.Y., Vlcek, J.C., Fonstad, C.G., Jones, R.V.

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Effects of Y and Ho doping on microstructure evolution during oxidation of extraordinary stable Hf-B-Si-Y/Ho-C-N films up to 1500 °C by Jiang, J.C., Shen, Y., Zeman, P., Procházka, M., Vlček, J., Meletis, E.I.

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Calculation and analysis of the complex refractive index of uniform films of the As–S–Se glassy alloy deposited by thermal evaporation by Márquez, E, González-Leal, J.M, Bernal-Oliva, A.M, Prieto-Alcón, R, Navarro-Delgado, J.C, Vlcek, M

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