Search Results - Volkos, S.N.

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  1. 1
    Reliability degradation of thin HfO2/SiO2 gate stacks by remote RF hydrogen and deuterium plasma treatment

    Reliability degradation of thin HfO2/SiO2 gate stacks by remote RF hydrogen and deuterium plasma treatment by EFTHYMIOU, E, BERNARDINI, S, ZHANG, J. F, VOLKOS, S. N, HAMILTON, B, PEAKER, A. R

    Published in Thin solid films
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  2. 2
    Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing

    Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing by TSOUTSOU, D, SCAREL, G, DEBERNARDI, A, CAPELLI, S. C, VOLKOS, S. N, LAMAGNA, L, SCHAMM, S, COULON, P. E, FANCIULLI, M

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  3. 3
    Reliability nano-characterization of thin SiO2 and HfSixOy/SiO2 gate stacks

    Reliability nano-characterization of thin SiO2 and HfSixOy/SiO2 gate stacks by EFTHYMIOU, E, BERNARDINI, S, VOLKOS, S. N, HAMILTON, B, ZHANG, J. F, UPPAL, H. J, PEAKER, A. R

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  4. 4
    Reliability degradation of thin HfO 2/SiO 2 gate stacks by remote RF hydrogen and deuterium plasma treatment

    Reliability degradation of thin HfO 2/SiO 2 gate stacks by remote RF hydrogen and deuterium plasma treatment by Efthymiou, E., Bernardini, S., Zhang, J.F., Volkos, S.N., Hamilton, B., Peaker, A.R.

    Published in Thin solid films
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  5. 5
    Erratum to “Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing” Microelectronic Engineering 85 (2008) 2411–2413

    Erratum to “Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing” Microelectronic Engineering 85 (2008) 2411–2413... by Tsoutsou, D., Scarel, G., Debernardi, A., Capelli, S.C., Volkos, S.N., Lamagna, L., Schamm, S., Coulon, P.E., Fanciulli, M.

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  6. 6
    Erratum to “Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La 2O 3 films upon annealing” Microelectronic Engineering 85 (2008) 2411–2413

    Erratum to “Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La 2O 3 films upon annealing” Microelectronic Engineering 85 (2008) 2411–2413... by Tsoutsou, D., Scarel, G., Debernardi, A., Capelli, S.C., Volkos, S.N., Lamagna, L., Schamm, S., Coulon, P.E., Fanciulli, M.

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  7. 7
    Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La 2O 3 films upon annealing

    Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La 2O 3 films upon annealing by Tsoutsou, D., Scarel, G., Debernardi, A., Capelli, S.C., Volkos, S.N., Lamagna, L., Schamm, S., Coulon, P.E., Fanciulli, M.

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  8. 8
    Reliability nano-characterization of thin SiO 2 and HfSi xO y/SiO 2 gate stacks

    Reliability nano-characterization of thin SiO 2 and HfSi xO y/SiO 2 gate stacks by Efthymiou, E., Bernardini, S., Volkos, S.N., Hamilton, B., Zhang, J.F., Uppal, H.J., Peaker, A.R.

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  9. 9
    Nanoscale electrical characterization of ultrathin high- k dielectric MOS stacks: A conducting AFM study

    Nanoscale electrical characterization of ultrathin high- k dielectric MOS stacks: A conducting AFM study by Uppal, H.J., Bernardini, S., Efthymiou, E., Volkos, S.N., Dimoulas, A., Markevich, V., Hamilton, B., Peaker, A.R.

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  10. 10
    Extrinsic stacking fault generation related to high– k dielectric growth on a Si substrate

    Extrinsic stacking fault generation related to high– k dielectric growth on a Si substrate by Volkos, S.N., Bernardini, S., Rigopoulos, N., Efthymiou, E.S., Hawkins, I.D., Hamilton, B., Dobaczewski, L., Hall, S., Hurley, P.K., Delabie, A., Peaker, A.R.

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  11. 11
    Negative-bias-temperature-instability in metal–insulator–semiconductor structures

    Negative-bias-temperature-instability in metal–insulator–semiconductor structures by Volkos, S.N., Peaker, A.R., Hawkins, I.D., Efthimiou, E., Petkos, G.

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