Search Results - Volokhine, Iouri

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  1. 1
    A 65 nm CMOS 30 dBm Class-E RF Power Amplifier With 60% PAE and 40% PAE at 16 dB Back-Off

    A 65 nm CMOS 30 dBm Class-E RF Power Amplifier With 60% PAE and 40% PAE at 16 dB Back-Off by Apostolidou, M., van der Heijden, M.P., Leenaerts, D.M.W., Sonsky, J., Heringa, A., Volokhine, I.

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  2. 2
    Scalable CMOS power devices with 70% PAE and 1, 2 and 3.4 Watt output power at 2GHz

    Scalable CMOS power devices with 70% PAE and 1, 2 and 3.4 Watt output power at 2GHz by Acar, M., van der Heijden, M.P., Volokhine, I., Apostolidou, M., Sonsky, J., Vromans, J.S.

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  3. 3
    11.9 W Output Power at S-band from 1 mm AlGaN/GaN HEMTs

    11.9 W Output Power at S-band from 1 mm AlGaN/GaN HEMTs by Krämer, Mark, Karouta, Fouad, Kwaspen, J J., Rudzinski, Marius, Larsen, Poul K., Suiker, Erwin M., De Hek, Peter A., Rödle, Thomas, Volokhine, Iouri, Kaufmann, Leon M.

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