Search Results - Vorderwestner, Martin

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  1. 1
    Smooth and high quality epitaxial strained Ge grown on SiGe strain relaxed buffers with 70–85% Ge

    Smooth and high quality epitaxial strained Ge grown on SiGe strain relaxed buffers with 70–85% Ge by Loo, Roger, Souriau, Laurent, Ong, Patrick, Kenis, Karine, Rip, Jens, Storck, Peter, Buschhardt, Thomas, Vorderwestner, Martin

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  2. 2
    (Invited) Epitaxial Growth of Low Defect SiGe Buffer Layers for Integration of New Materials on 300 mm Silicon Wafers

    (Invited) Epitaxial Growth of Low Defect SiGe Buffer Layers for Integration of New Materials on 300 mm Silicon Wafers by Kozlowski, Gregorz, Fursenko, Oksana, Zaumseil, Peter, Schroeder, Thomas, Vorderwestner, Martin, Storck, Peter

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    Antimony surfactant for epitaxial growth of SiGe buffer layers at high deposition temperatures

    Antimony surfactant for epitaxial growth of SiGe buffer layers at high deposition temperatures by Storck, Peter, Vorderwestner, Martin, Kondratyev, Alexey, Talalaev, Roman, Amamchyan, Art, Woelk, Egbert

    Published in Thin solid films
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