Search Results - Vyletalina, O. I.

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    Harnessing reverse annealing phenomenon for shallow p-n junction formation

    Harnessing reverse annealing phenomenon for shallow p-n junction formation by Krasnobaev, L. Y., Cuomo, J. J., Vyletalina, O. I.

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    Features of buried dielectric layers: ion beam synthesis in silicon by a high temperature sequential oxygen and nitrogen implantation with substoichiometric doses

    Features of buried dielectric layers: ion beam synthesis in silicon by a high temperature sequential oxygen and nitrogen implantation with substoichiometric doses by Charni, L.A., Danilin, A.B., Drakin, K.A., Malinin, A.A., Parkhomenko, Yu.N., Petrov, A.F., Vyletalina, O.I.

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    Ion beam synthesis of Si3N4 amorphous buried layers

    Ion beam synthesis of Si3N4 amorphous buried layers by Belogorokhov, A.I., Danilin, A.B., Mordkovich, V.N., Vyletalina, O.I.

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