Transient self-heating effects in multifinger AlGaN/GaN HEMTs with metal airbridges by Kuzmik, J., Bychikhin, S., Lossy, R., Würfl, H.-J., di Forte Poisson, M.-A., Teyssier, J.-P., Gaquière, C., Pogany, D.

Get full text

Si-implantation for low ohmic contact resistances in RF GaN HEMTs by Yazdani, H, Brunner, F, Thies, A, Würfl, H J, Hilt, O

Get full text

Single image spectral electroluminescence (photon emission) of GaN HEMTs by Scholz, P., Glowacki, A., Kerst, U., Boit, C., Ivo, P., Lossy, R., Wurfl, H.-J, Yokoyama, Y.

Request full text

A 3.2 W coplanar single-device X-band amplifier with GaAs HBT by Lenk, F., Klockenhoff, H., Kurpas, P., Maabdorf, A., Wurfl, H.J., Heinrich, W.

Request full text

Low-resistive gate module for RF GaN-HFETs by electroplating by Yazdani, H, Thies, A, Stützle, P, Bengtsson, O, Hilt, O, Heinrich, W, Würfl, J

Get full text

Vertical GaN MISFET for chip-on-chip high speed laser driving applications by Bahat Treidel, E, Christopher, H, Hilt, O, Klehr, A, Ginolas, A, Liero, A, Würfl, J

Request full text

1.17 GW/cm² AlN-Based GaN-Channel HEMTs on Mono-Crystalline AlN Substrate by Wolf, M., Brunner, F., Last, C., Halhoul, H., Rentner, D., Treidel, E. Bahat, Wurfl, J., Hilt, O.

Get full text

(Invited) Technological Approaches Towards High Voltage, Fast Switching GaN Power Transistors by Würfl, Joachim, Hilt, Oliver, Bahat-Treidel, Eldad, Zhytnytska, Rimma, Klein, Kirill, Kotara, Przemyslaw, Brunner, Frank, Knauer, Arne, Krüger, O., Weyers, Markus, Tränkle, Günther

Get full text

Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transi... by Capriotti, M., Bahat Treidel, E., Fleury, C., Bethge, O., Ostermaier, C., Rigato, M., Lancaster, S.L.C., Brunner, F., Detz, H., Hilt, O., Würfl, J., Pogany, D., Strasser, G.

Get full text

The influence of the gate trench orientation to the crystal plane on the conduction properties of vertical GaN MISFETs for laser driving applications by Treidel, E. Bahat, Hilt, O., Christopher, H., Klehr, A., Ginolas, A., Liero, A., Wurfl, J.

Request full text

Reliability of AIGaN/GaN HFETs comprising refractory ohmic and Schottky contacts by Würfl, J., Hilsenbeck, J., Nebauer, E., Tränkle, G., Obloh, H., Österle, W.

Get full text

38 GHz push-push GaAs-HBT MMIC oscillator by Schott, A., Kuhnert, H., Lenk, F., Hilsenbeck, J., Wurfl, J., Heinrich, W.

Request full text

A Compact 16 Watt X-Band GaN-MMIC Power Amplifier by Klockenhoff, H., Behtash, R., Wurfl, J., Heinrich, W., Trankle, G.

Request full text

Low phase-noise GaInP/GaAs-HBT MMIC oscillators up to 36 GHz by Kuhnert, H., Lenk, F., Hilsenbeck, J., Wurfl, J., Heinrich, W.

Request full text

Deep implantation of nitrogen into GaAs for selective three-dimensional microstructuring by WÜRFL, J, JIANMIAN MIAO, RÜCK, D, HARTNAGEL, H. L

Get full text

Defect analysis of degraded InGaP/GaAs HBTs by Pazirandeh, R., Zeimer, U., Kirmse, H., Wurfl, J., Trankle, G., Osterle, W.

Request full text

A new GaAs technology for stable FET's at 300°C by FRICKE, K, HARTNAGEL, H. L, SCHÜTZ, R, SCHWEEGER, G, WÜRFL, J

Get full text

AlGaAs/GaAs HBT for high-temperature applications by Fricke, K., Hartnagel, H.L., Lee, W.-Y., Wurfl, J.

Get full text

Uniformity and Scalability of AlGaN/GaN HEMTs Using Stepper Lithography by Lossy, R., Hilsenbeck, J., Würfl, J., Obloh, H.

Get full text

Low phase-noise monolithic GaInP/GaAs-HBT VCO for 77 GHz by Lenk, F., Schott, M., Hilsenbeck, J., Wurfl, J., Heinrich, W.

Request full text