Cost-effective BARC/resist-via-fill free integration technology for 0.13μm Cu/low-k by LEE, Soo-Geun, LEE, Kyoung-Woo, CHUNG, Joo-Hyuk, KANG, Ho-Kyu, SUH, Kwang-Pyuk, KIM, Il-Goo, PARK, Wan-Jae, WEE, Young-Jin, SONG, Won-Sang, KIM, Jae-Hak, LEE, Seung-Jin, OH, Hyeok-Sang, LEE, Yong-Tak

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Cost-effective "BARC/resist-via-fill free" integration technology for 0.13 /spl mu/m Cu/low-k by Soo-Geun Lee, Kyoung-Woo Lee, Il-Goo Kim, Wan-Jae Park, Young-Jin Wee, Won-Sang Song, Jae-Hak Kim, Seung-Jin Lee, Hyeok-Sang Oh, Yong-Tak Lee, Joo-Hyuk Chung, Ho-kyu Kang, Kwang-Pyuk Suh

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Electromigration reliability of dual damascene copper interconnect with different IMD structures by Young-Jin Wee, Ki-Chul Park, Won-Sang Song, Hyeon-Deok Lee, Wo-Kyu Kang, Joo-Tae Moon

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A post-package bit-repair scheme using static latches with bipolar-voltage programmable antifuse circuit for high-density DRAMs by Kyeong-Sik Min, Jong-Tai Park, Sang-Pil Lee, Young-Hee Kim, Tae-Heum Yang, Jong-Doo Joo, Kyung-Mi Lee, Jae-Kyung Wee, Jin-Yong Chung

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Alleviating electromigration through re-engineering the interface between Cu & dielectric-diffusion-barrier in 90 nm Cu/SiOC (k=2.9) device by Young Jin Wee, Soo Geun Lee, Won Sang Song, Kyoung-Woo Lee, Nam Hyung Lee, Ja Eung Ku, Ki-Kwan Park, Seung Jin Lee, Jae Hak Kim, Joo Hyuk Chung, Hong Jae Shin, Sang Rok Hah, Ho-Kyu Kang, Gwang Pyuk Suh

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