Search Results - WEN CHAO SHEN

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  1. 1
    A Low-Voltage Bulk-Drain-Driven Read Scheme for Sub-0.5 V 4 Mb 65 nm Logic-Process Compatible Embedded Resistive RAM (ReRAM) Macro

    A Low-Voltage Bulk-Drain-Driven Read Scheme for Sub-0.5 V 4 Mb 65 nm Logic-Process Compatible Embedded Resistive RAM (ReRAM) Macro by CHANG, Meng-Fan, WU, Che-Wei, KUO, Chia-Cheng, SHEN, Shin-Jang, YANG, Sue-Meng, LIN, Ku-Feng, SHEN, Wen-Chao, KING, Ya-Chin, LIN, Chorng-Jung, CHIH, Yu-Der

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  2. 2
    A Contact-Resistive Random-Access-Memory-Based True Random Number Generator

    A Contact-Resistive Random-Access-Memory-Based True Random Number Generator by HUANG, Chien-Yuan, WEN CHAO SHEN, TSENG, Yuan-Heng, KING, Ya-Chin, LIN, Chrong-Jung

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  3. 3
    Modeling of electron conduction in contact resistive random access memory devices as random telegraph noise

    Modeling of electron conduction in contact resistive random access memory devices as random telegraph noise by Tseng, Yuan Heng, Shen, Wen Chao, Lin, Chrong Jung

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  4. 4
    19.4 embedded 1Mb ReRAM in 28nm CMOS with 0.27-to-1V read using swing-sample-and-couple sense amplifier and self-boost-write-termination scheme

    19.4 embedded 1Mb ReRAM in 28nm CMOS with 0.27-to-1V read using swing-sample-and-couple sense amplifier and self-boost-write-termination scheme by Meng-Fan Chang, Jui-Jen Wu, Tun-Fei Chien, Yen-Chen Liu, Ting-Chin Yang, Wen-Chao Shen, Ya-Chin King, Chorng-Jung Lin, Ku-Feng Lin, Yu-Der Chih, Natarajan, Sreedhar, Chang, Jonathan

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  5. 5
    28-nm 2T High- K Metal Gate Embedded RRAM With Fully Compatible CMOS Logic Processes

    28-nm 2T High- K Metal Gate Embedded RRAM With Fully Compatible CMOS Logic Processes by Chin Yu Mei, Wen Chao Shen, Chun Hsiung Wu, Yue-Der Chih, Ya-Chin King, Chrong Jung Lin, Ming-Jinn Tsai, Kan-Hsueh Tsai, Chen, Frederick T.

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  6. 6
    Low Swing-Sample-and-Couple Sense Amplifier and Energy-Efficient Self-Boost-Write-Termination Scheme for Embedded ReRAM Macros Against Resistance and Switch-Time Variations

    Low Swing-Sample-and-Couple Sense Amplifier and Energy-Efficient Self-Boost-Write-Termination Scheme for Embedded ReRAM Macros Against Resistance and Switch-Time Variations by Meng-Fan Chang, Jui-Jen Wu, Tun-Fei Chien, Yen-Chen Liu, Ting-Chin Yang, Wen-Chao Shen, Ya-Chin King, Chrong Jung Lin, Ku-Feng Lin, Yu-Der Chih, Chang, Jonathan

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  7. 7
    Memristor Logic Operation Gate With Share Contact RRAM Cell

    Memristor Logic Operation Gate With Share Contact RRAM Cell by Wen Chao Shen, Yuan Heng Tseng, Chih, Y.-D, Chrong Jung Lin

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  8. 8
    New High-Density Differential Split Gate Flash Memory With Self-Boosting Function

    New High-Density Differential Split Gate Flash Memory With Self-Boosting Function by WEN CHAO SHEN, LEE, Te-Liang, PAN, Hsin-Wei, YANG, Zhi-Sung, CHIH, Yue-Der, LIEN, Chiu-Wang, KING, Ya-Chin, CHRONG JUNG LIN

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  9. 9
    A new 28 nm high-k metal gate CMOS logic one-time programmable memory cell

    A new 28 nm high-k metal gate CMOS logic one-time programmable memory cell by Hsiao, Woan Yun, Mei, Chin Yu, Shen, Wen Chao, Chih, Yue Der, King, Ya-Chin, Lin, Chrong Jung

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  10. 10
    A novel high-density embedded AND-type split gate flash memory

    A novel high-density embedded AND-type split gate flash memory by Shen, Wen Chao, Wang, Ching-Hua, Pan, Hsin-Wei, Yang, Zhi-Sung, Chih, Yue Der, Lee, Te-Liang, Lien, Chiu-Wang, King, Ya-Chin, Lin, Chrong Jung

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  11. 11
    A new ultra high density 1F1R MLC flash contact RRAM

    A new ultra high density 1F1R MLC flash contact RRAM by Yu-Wen Chung, Wen Chao Shen, Ping-Yu Chen, Zih-Song Wang, Huei-Haurng Chen, Ming-Jinn Tsai, Ya-Chin King, Chrong Jung Lin

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  12. 12
    32nm strained nitride MTP cell by fully CMOS logic compatible process

    32nm strained nitride MTP cell by fully CMOS logic compatible process by Wen Chao Shen, Chia-En Huang, Hsun OuYang, Ya-Chin King, Chrong Jung Lin

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  13. 13
    Low rmVDDmin Swing-Sample-and-Couple Sense Amplifier and Energy-Efficient Self-Boost-Write-Termination Scheme for Embedded ReRAM Macros Against Resistance and Switch-Time Variations

    Low rmVDDmin Swing-Sample-and-Couple Sense Amplifier and Energy-Efficient Self-Boost-Write-Termination Scheme for Embedded ReRAM Macros Against Resistance and Switch-Time Variation... by Chang, Meng-Fan, Wu, Jui-Jen, Chien, Tun-Fei, Liu, Yen-Chen, Yang, Ting-Chin, Shen, Wen-Chao, King, Ya-Chin, Lin, Chrong Jung, Lin, Ku-Feng, Chih, Yu-Der, Chang, Jonathan

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  14. 14
    A new 28nm high-k metal gate CMOS logic one-time programmable memory cell

    A new 28nm high-k metal gate CMOS logic one-time programmable memory cell by Hsiao, Woan Yun, Mei, Chin Yu, Shen, Wen Chao, Chih, Yue Der, King, Ya-Chin, Lin, Chrong Jung

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  15. 15
    Electron trapping effect on the switching behavior of contact RRAM devices through random telegraph noise analysis

    Electron trapping effect on the switching behavior of contact RRAM devices through random telegraph noise analysis by Yuan Heng Tseng, Wen Chao Shen, Chia-En Huang, Chrong Jung Lin, Ya-Chin King

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  16. 16
    Chromatin-remodeling factor OsINO80 is involved in regulation of gibberellin biosynthesis and is crucial for rice plant growth and development

    Chromatin-remodeling factor OsINO80 is involved in regulation of gibberellin biosynthesis and is crucial for rice plant growth and development by Li, Chao, Liu, Yuhao, Shen, Wen‐Hui, Yu, Yu, Dong, Aiwu

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  17. 17
    High-K metal gate contact RRAM (CRRAM) in pure 28nm CMOS logic process

    High-K metal gate contact RRAM (CRRAM) in pure 28nm CMOS logic process by Wen Chao Shen, Chin Yu Mei, Chih, Y.-D, Shyh-Shyuan Sheu, Ming-Jinn Tsai, Ya-Chin King, Chrong Jung Lin

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  18. 18
    28nm high-k metal gate RRAM with fully compatible CMOS logic processes

    28nm high-k metal gate RRAM with fully compatible CMOS logic processes by Chin Yu Mei, Wen Chao Shen, Chih, Y.-D, Ya-Chin King, Chrong Jung Lin

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  19. 19
    A high density Twin-Gate OTP cell in pure 28nm CMOS process

    A high density Twin-Gate OTP cell in pure 28nm CMOS process by Woan Yun Hsiao, Chin Yu Mei, Wen Chao Shen, Tzong Sheng Chang, Yue Der Chih, Ya-Chin King, Chrong Jung Lin

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  20. 20
    Possible Mechanism of Therapeutic Effect of 3-Methyl-l-phenyl-2-pyrazolin-5-one and Bone Marrow Stromal Cells Combination Treatment in Rat Ischemic Stroke Model

    Possible Mechanism of Therapeutic Effect of 3-Methyl-l-phenyl-2-pyrazolin-5-one and Bone Marrow Stromal Cells Combination Treatment in Rat Ischemic Stroke Model by Li-Hua Shen Jin Chen Hua-Chao Shen Min Ye Xiao-Fei Liu Wen-Sen Ding Ya-Feng Sheng Xin-Sheng Ding

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