Towards forming-free resistive switching in oxygen engineered HfO2−x by Sharath, S. U., Bertaud, T., Kurian, J., Hildebrandt, E., Walczyk, C., Calka, P., Zaumseil, P., Sowinska, M., Walczyk, D., Gloskovskii, A., Schroeder, T., Alff, L.

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Hard x-ray photoelectron spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures by Sowinska, M., Bertaud, T., Walczyk, D., Thiess, S., Schubert, M. A., Lukosius, M., Drube, W., Walczyk, Ch, Schroeder, T.

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Resistive switching of HfO2-based Metal–Insulator–Metal diodes: Impact of the top electrode material by Bertaud, T., Walczyk, D., Walczyk, Ch, Kubotsch, S., Sowinska, M., Schroeder, T., Wenger, Ch, Vallée, C., Gonon, P., Mannequin, C., Jousseaume, V., Grampeix, H.

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Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells by WALCZYK, D, WALCZYK, Ch, SCHROEDER, T, BERTAUD, T, SOWINSKA, M, LUKOSIUS, M, FRASCHKE, M, TILLACK, B, WENGER, Ch

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Metal-Insulator-Metal capacitors with ALD grown SrTiO3: Influence of Pt electrodes by Lukosius, M, Blomberg, T, Walczyk, D, Ruhl, G, Wenger, Ch

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Resistive switching of Ti/HfO2-based memory devices: impact of the atmosphere and the oxygen partial pressure by Bertaud, T, Sowinska, M, Walczyk, D, Walczyk, Ch, Kubotsch, S, Wenger, Ch, Schroeder, T

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Rapid Tooling for Sheet Metal Forming Using Profiled Edge Laminations—Design Principles and Demonstration by Walczyk, D. F, Hardt, D. E

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A Comparison of Rapid Fabrication Methods for Sheet Metal Forming Dies by Walczyk, D. F, Hardt, D. E

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On the role of Ti adlayers for resistive switching in HfO2-based metal-insulator-metal structures: Top versus bottom electrode integration by Walczyk, Ch, Wenger, Ch, Walczyk, D., Lukosius, M., Costina, I., Fraschke, M., Dabrowski, J., Fox, A., Wolansky, D., Thiess, S., Miranda, E., Tillack, B., Schroeder, T.

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(Invited) Resistive Switching and Current Status of HfO2-based RRAM by Walczyk, Christian, Sowinska, Malgorzata, Walczyk, Damian, Calka, Pauline, Schroeder, Thomas

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Impact of Temperature on the Resistive Switching Behavior of Embedded \hbox-Based RRAM Devices by Walczyk, C., Walczyk, D., Schroeder, T., Bertaud, T., Sowinska, M., Lukosius, M., Fraschke, M., Wolansky, D., Tillack, B., Miranda, E., Wenger, C.

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Hard x-ray photoelectron spectroscopy study of the electroforming in Ti/HfO 2 -based resistive switching structures by Sowinska, M., Bertaud, T., Walczyk, D., Thiess, S., Schubert, M. A., Lukosius, M., Drube, W., Walczyk, Ch, Schroeder, T.

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Electrochemical Oxidation of Niobium and Tantalum Carbides in Aqueous Solutions by Walczyk, Dustin J., Mason, Daniel, Palazzo, Benjamin G., Norris, Zach, McRae, Naquan, Tran, A. T., Hettinger, Jeffrey, Yu, Lei

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Towards forming-free resistive switching in oxygen engineered HfO{sub 2−x} by Sharath, S. U., Kurian, J., Hildebrandt, E., Alff, L., Bertaud, T., Walczyk, C., Calka, P., Zaumseil, P., Sowinska, M., Walczyk, D., Gloskovskii, A., Schroeder, T., Brandenburgische Technische Universität, Konrad-Zuse-Strasse 1, 03046 Cottbus

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Fixtureless assembly of sheet metal parts for the aircraft industry by Walczyk, D F, Raju, V, Miller, R

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(Invited) HfO2-Based RRAM for Embedded Nonvolatile Memory: From Materials Science to Integrated 1T1R RRAM Arrays by Bertaud, Thomas, Walczyk, Damian, Sowinska, Malgorzata, Wolansky, Dirk, Tillack, Bernd, Schoof, Gunter, Stikanov, Valery, Wenger, Christian, Thiess, Sebastian, Schroeder, Thomas, Walczyk, Christian

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Resistive switching characteristics of CMOS embedded HfO sub(2-based 1T1R cells) by Walczyk, D, Walczyk, Ch, Schroeder, T, Bertaud, T, Sowinska, M, Lukosius, M, Fraschke, M, Tillack, B, Wenger, Ch

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Resistive switching characteristics of CMOS embedded HfO 2-based 1T1R cells by Walczyk, D., Walczyk, Ch, Schroeder, T., Bertaud, T., Sowińska, M., Lukosius, M., Fraschke, M., Tillack, B., Wenger, Ch

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Resistive switching of Ti/HfO 2 -based memory devices: impact of the atmosphere and the oxygen partial pressure by Bertaud, T, Sowinska, M, Walczyk, D, Walczyk, Ch, Kubotsch, S, Wenger, Ch, Schroeder, T

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Metal-Insulator-Metal capacitors with ALD grown SrTiO 3 : Influence of Pt electrodes by Lukosius, M, Blomberg, T, Walczyk, D, Ruhl, G, Wenger, Ch

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