Search Results - Wang, Jin-Yan (金延 王)

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    A High Breakdown Voltage AlGaN/GaN MOSHEMT Using Thermal Oxidized Al-Ti as the Gate Insulator

    A High Breakdown Voltage AlGaN/GaN MOSHEMT Using Thermal Oxidized Al-Ti as the Gate Insulator by Zhou, Bin (斌周), Wang, Jin-Yan (金延 王), Meng, Di (迪孟), Lin, Shu-Xun (书勋 林), Fang, Min (敏方), Dong, Zhi-Hua (志华 董), Yu, Min (民于), Hao, Yi-Long (一龙 郝), Wen, Cheng P. (文正)

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