Effects of mid-gap defects and barrier interface reactions on tunneling behaviors of ZnO-i-Si heterojunctions by Chang, Chun-Fu, Wadekar, Paritosh V., Hsieh, Wan-Chen, Lin, Wen-Yen, Wang, Yu-Sheng, Wang, Jun-Hau, Lin, Jyun-Jie, Huang, Hui-Chun, Chang, Ching-Wen, Tu, Li-Wei, Liao, Chih-Hsiung, Liao, Hua-Hsien, Ho, New-Jin, Seo, Hye-Won, Chen, Quark Y., Chu, Wei-Kan

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Epitaxial n-ZnO on p-Si with native SiOx reduced by Al overlayer by Guo-Sin Huang, Chun-Fu Chang, Chen, Q. Y., Lin, J., Wang, J., Wadekar, P. V., Liao, C., Liao, H. H., Hui-Chun Huang, Wijesundera, D., Chu, W. K., Li Wei Tu, Ho, N. J.

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