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AlGaN-GaN HEMTs on Si with power density performance of 1.9 W/mm at 10 GHz
by
Minko, A.
,
Hoel, V.
,
Morvan, E.
,
Grimbert, B.
,
Soltani, A.
,
Delos, E.
,
Ducatteau, D.
,
Gaquiere, C.
,
Theron, D.
,
De Jaeger, J.C.
,
Lahreche, H.
,
Wedzikowski, L.
,
Langer, R.
,
Bove, P.
Published in
IEEE electron device letters
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Silodosin Therapy for Lower Urinary Tract Symptoms in Men with Suspected Benign Prostatic Hyperplasia: Results of an International, Randomized, Double-Blind, Placebo- and Active-Co...
by
Chapple, Christopher R
,
Montorsi, Francesco
,
Tammela, Teuvo L.J
,
Wirth, Manfred
,
Koldewijn, Evert
,
Fernández Fernández, Eldiberto
Published in
European urology
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European Urology
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Ieee Electron Device Letters
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Adrenergic Alpha-1 Receptor Antagonists - Administration & Dosage
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Adrenergic Alpha-1 Receptor Antagonists - Adverse Effects
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Aged
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Aluminum Gallium Nitride
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Biological And Medical Sciences
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Bph
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Current Density
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Density
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Devices
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Double-Blind Method
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Drains
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Europe
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Frequency
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Gain
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Gallium Nitride
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Gallium Nitrides
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Gates
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Hemts
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High Electron Mobility Transistors
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Humans
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