Search Results - Wehrer, Rebecca

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  1. 1
    Greater than 20% radiant heat conversion efficiency of a thermophotovoltaic radiator/module system using reflective spectral control

    Greater than 20% radiant heat conversion efficiency of a thermophotovoltaic radiator/module system using reflective spectral control by Wernsman, B., Siergiej, R.R., Link, S.D., Mahorter, R.G., Palmisiano, M.N., Wehrer, R.J., Schultz, R.W., Schmuck, G.P., Messham, R.L., Murray, S., Murray, C.S., Newman, F., Taylor, D., DePoy, D.M., Rahmlow, T.

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  2. 2
    Advanced Thermophotovoltaic Devices for Space Nuclear Power Systems

    Advanced Thermophotovoltaic Devices for Space Nuclear Power Systems by Wernsman, Bernard, Mahorter, Robert G., Siergiej, Richard, Link, Samuel D., Wehrer, Rebecca J., Belanger, Sean J., Fourspring, Patrick, Murray, Susan, Newman, Fred, Taylor, Dan, Rahmlow, Tom

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  3. 3
    Monolithic interconnected modules (MIMs) for thermophotovoltaic energy conversion

    Monolithic interconnected modules (MIMs) for thermophotovoltaic energy conversion by Wilt, David, Wehrer, Rebecca, Palmisiano, Marc, Wanlass, Mark, Murray, Christopher

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  4. 4
    Monolithic interconnected modules (MIMs) for thermophotovoltaic energy conversion: Special issue on thermophotovoltaics

    Monolithic interconnected modules (MIMs) for thermophotovoltaic energy conversion: Special issue on thermophotovoltaics by WILT, David, WEHRER, Rebecca, PALMISIANO, Marc, WANLASS, Mark, MURRAY, Christopher

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  5. 5
    Growth, processing and characterization of 0.55-eV n/p/n monolithic interconnected modules

    Growth, processing and characterization of 0.55-eV n/p/n monolithic interconnected modules by Murray, C.S., Fatemi, N., Stan, M., Wemsman, B., Wehrer, R.J.

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  6. 6
    0.55 eV n/p/n MIM TPV cell development

    0.55 eV n/p/n MIM TPV cell development by Wilt, D.M., Clark, E.B., Clevenger, M.B., Murray, C.S., Wehrer, R.J.

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  7. 7
    Molecular beam epitaxy grown 0.6 eV n ∕ p ∕ n In P As ∕ In Ga As ∕ In Al As double heterostructure thermophotovoltaic devices using carbonas the p -type dopant

    Molecular beam epitaxy grown 0.6 eV n ∕ p ∕ n In P As ∕ In Ga As ∕ In Al As double heterostructure thermophotovoltaic devices using carbonas the p -type dopant by Wernsman, Bernard, Bird, Thomas, Sheldon, Michael, Link, Samuel, Wehrer, Rebecca

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  8. 8
    Molecular beam epitaxy grown 0.6eV n∕p∕n InPAs∕InGaAs∕InAlAs double heterostructure thermophotovoltaic devices using carbon as the p-type dopant

    Molecular beam epitaxy grown 0.6eV n∕p∕n InPAs∕InGaAs∕InAlAs double heterostructure thermophotovoltaic devices using carbon as the p-type dopant by Wernsman, Bernard, Bird, Thomas, Sheldon, Michael, Link, Samuel, Wehrer, Rebecca

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  9. 9
    Molecular beam epitaxy grown 0.6 eV n ∕ p ∕ n In P As ∕ In Ga As ∕ In Al As double heterostructure thermophotovoltaic devices using carbon as the p -type dopant

    Molecular beam epitaxy grown 0.6 eV n ∕ p ∕ n In P As ∕ In Ga As ∕ In Al As double heterostructure thermophotovoltaic devices using carbon as the p -type dopant by Wernsman, Bernard, Bird, Thomas, Sheldon, Michael, Link, Samuel, Wehrer, Rebecca

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