Design and performance of tunnel collector HBTs for microwave power amplifiers by Welty, R.J., Mochizuki, K., Lutz, C.R., Welser, R.E., Asbeck, P.M.

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Impact of compositionally graded base regions on the DC and RF properties of reduced turn-on voltage InGaP-GaInAsN DHBTs by Stevens, K.S., Welty, R.J., Welser, R.E., Landini, B.E., Asbeck, P.M., Shih-Chieh Hung, Wen-Pin Lu, Shun-Ching Feng

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Implementation of reduced turn-on voltage InGaP HBTs using graded GaInAsN base regions by DeLuca, P.M., Lutz, C.R., Welser, R.E., Chi, T.Y., Huang, E.K., Welty, R.J., Asbeck, P.M.

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GaInP/GaAs collector-up tunneling-collector heterojunction bipolar transistors (C-up TC-HBTs): optimization of fabrication process and epitaxial layer structure for high-efficiency... by Mochizuki, K., Welty, R.J., Asbeck, P.M., Lutz, C.R., Welser, R.E., Whitney, S.J., Pan, N.

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GaN/sub 0.011/P/sub 0.989/-GaP double-heterostructure red light-emitting diodes directly grown on GaP substrates by Xin, H.P., Welty, R.J., Tu, C.W.

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GaAs/Ga0.89In0.11N0.02As0.98/GaAs NpN double heterojunction bipolar transistor with low turn-on voltage by Welty, R.J, Xin, H.P, Mochizuki, K, Tu, C.W, Asbeck, P.M

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GaN0.011P0.989-GaP double-heterostructure red light-emitting diodes directly grown on GaP substrates by Xin, H.P, Welty, R.J, Tu, C.W

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Gas-source MBE growth of Ga(In)NP/GaP structures and their applications for red light-emitting diodes by Xin, H.P, Welty, R.J, Hong, Y.G, Tu, C.W

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GaAs/Ga 0.89In 0.11N 0.02As 0.98/GaAs NpN double heterojunction bipolar transistor with low turn-on voltage by Welty, R.J, Xin, H.P, Mochizuki, K, Tu, C.W, Asbeck, P.M

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Application of GaInP/GaAs DHBTs to power amplifiers for wireless communications by Pin-Fan Chen, Hsin, U.-M.T., Welty, R.J., Asbeck, P.M., Pierson, R.L., Zampardi, P.J., Ho, W.-J., Vincent Ho, M.C., Chang, M.F.

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Bandgap engineering of GaInNP on GaAs(001) for electronic applications by Tu, C.W., Hong, Y.G., Andre, R., Welty, R.J., Asbeck, P.M.

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Tunnel collector GaInP/GaAs HBTs for microwave power amplifiers by Welty, R.J., Mochizuki, K., Lutz, C.R., Asbeck, P.M.

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Chlorine-hydrogen ECR etching of InGaAsP/InP by Welty, R.J., Reinhardt, C.E., Han, I.Y., Du, Y., Yoo, S.J.

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Design and characterization of GaAs-Ga/sub 0.89/In/sub 0.11/N/sub 0.02/As/sub 0.98/-GaAs NpN double heterojunction bipolar transistors with low turn-on voltage by Welty, R.J., Xin, H.P., Mochizuki, K., Tu, C.W., Asbeck, P.M.

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Porous silicon technology for RF integrated circuit applications by Welty, R.J., Park, S.H., Asbeck, P.M., Dancil, K.-P.S., Sailor, M.J.

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GaInP/GaAs tunnel collector HBTs: base-collector barrier height analysis by Keogh, D.M., Welty, R.J., Lopez-Gonzalez, J., Lutz, C.R., Welser, R.E., Asbeck, P.M.

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Nitrogen incorporation in GaInP for novel heterojunction bipolar transistors by Welty, R.J., Hong, Y.G., Xin, H.P., Tu, C.W., Asbeck, P.M., Mochizuki, K.

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Novel optoelectronic materials: GaInNAs and Ga(In)NP by Tu, C.W., Xin, H.P., Sopanen, M., Welty, R.J.

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