Novel nanostructure architectures by Schmidt, O.G., Rastelli, A., Kar, G.S., Songmuang, R., Kiravittaya, S., Stoffel, M., Denker, U., Stufler, S., Zrenner, A., Grützmacher, D., Nguyen, B.-Y., Wennekers, P.

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A 8X Oversampling Ratio, 14bit, 5-MSamples/s Cascade 3-1 Sigma-delta Modulator by Yin, Y, Klar, H, Wennekers, P

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SiGe technology requirements for millimeter-wave applications by Wennekers, P., Reuter, R.

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An integrated SiGe transmitter circuit for 24 GHz radar sensors by Wennekers, P., Ghazionour, A., Reuter, R.

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Erbium doping of molecular beam epitaxial GaAs by SMITH, R. S, MÜLLER, H. D, ENNEN, H, WENNEKERS, P, MAIER, M

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Analysis of ytterbium arsenide films grown on GaAs by molecular beam epitaxy by RICHTER, H. J, SMITH, R. S, HERRES, N, SEELMANN-EGGEBERT, M, WENNEKERS, P

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Spectroscopic techniques for characterization of high-mobility strained-Si CMOS by Schmidt, Jens, Vogg, Günther, Bensch, Frank, Kreuzer, Stephan, Ramm, Peter, Zollner, Stefan, Liu, Ran, Wennekers, Peter

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10 GB/s bit-synchronizer circuit with automatic timing alignment by clock phase shifting using quantum-well AlGaAs/GaAs/AlGaAs by Wennekers, P., Novotny, U., Huelsmann, A., Kaufel, G., Koehler, K., Raynor, B., Schneider, J.

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A cascade 3-1-1 multibit /spl Sigma//spl Delta/ A/D modulator with reduced sensitivity to non-idealities by Yi Yin, Klar, H., Wennekers, P.

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Structural, electrical and optical characterization of singlecrystal ErAs layers grown on GaAs by MBE by Ralston, J. D., Ennen, H., Wennekers, P., Hiesinger, P., Herres, N., Schneider, J., Müller, H. D., Rothemund, W., Fuchs, F., Schmälzlin, J., Thonke, K.

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Fully Integrated SiGe-BiCMOS Receiver(RX) and Transmitter(TX) Chips for 76.5 GHz FMCW Automotive Radar Systems Including Demonstrator Board Design by Reuter, R., Li, H., To, I., Yin, Y., Ghazinour, A., Jahn, D., Morgan, D., Feige, J., Welch, P., Braithwaite, S., Knappenberger, B., Scheitlin, D., John, J., Huang, M., Wennekers, P., Tutt, M., Trigas, C., Kirchgessner, J.

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SiGe 77GHz Automotive Radar Technology by Huang, W.M., John, J. P., Braithwaite, S., Kirchgessner, J., Lim, I.S., Morgan, D., Park, Y.B., Shams, S., To, I., Welch, P., Reuter, R., Li, H., Ghazinour, A., Wennekers, P., Yin, Y.

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A fully-monolithic SiGe-BiCMOS transceiver chip for 24 GHz applications by Ghazinour, Wennekers, Schmidt, Yin Yi, Reuter, Teplik

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O/e-MCM packaging with new, patternable dielectric and optical materials by Robertsson, M.E., Hagel, O.-J., Gustafsson, G., Dabek, A., Popall, M., Cergel, L., Wennekers, P., Kiely, P., Lebby, M., Lindahl, T.

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P-contact MESFETs for high voltage mixed-mode RF-applications by Wennekers, P., Zdebel, P., Wilson, M., Bushey, T., Bernhard, B.

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Understanding the cause of IV kink in GaAs MESFETs with two-dimensional numerical simulations by Wilson, M.R., Zdebel, I., Wennekers, P., Anholt, R.

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A contribution to the current gain temperature dependence of bipolar transistors by Rein, H.-M., v. Rohr, H., Wennekers, P.

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10 Gb/s bit-synchronizer circuit with automatic timing alignment by clock phase shifting using quantum-well AlGaAs/GaAs/AlGaAs technology by WENNEKERS, P, NOVOTNY, U, HUELSMANN, A, KAUFEL, G, KOEHLER, K, RAYNOR, B, SCHNEIDER, J

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Structural, electrical and optical characterization of single-crystal ErAs layers grown on GaAs by MBE by RALSTON, J. D, ENNEN, H, THONKE, K, WENNEKERS, P, HIESINGER, P, HERRES, N, SCHNEIDER, J, MÜLLER, H. D, ROTHEMUND, W, FUCHS, F, SCHMÄLZLIN, J

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Nascent Entrepreneurship and the Level of Economic Development by Wennekers, Sander, van Stel, André, Thurik, Roy, Reynolds, Paul

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