Search Results - Werking, James

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  1. 1
    Methane/hydrogen-based reactive ion etching of InAs, InP, GaAs, and GaSb

    Methane/hydrogen-based reactive ion etching of InAs, InP, GaAs, and GaSb by WERKING, J, SCHRAMM, J, CHANH NGUYEN, HU, E. L, KROEMER, H

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  2. 2
    InAs-AlSb heterostructure field-effect transistors fabricated using argon implantation for device isolation

    InAs-AlSb heterostructure field-effect transistors fabricated using argon implantation for device isolation by Werking, James, Tuttle, Gary, Nguyen, Chanh, Hu, Evelyn L., Kroemer, Herbert

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  3. 3
    High-transconductance InAs/AlSb heterojunction field-effect transistors with delta -doped AlSb upper barriers

    High-transconductance InAs/AlSb heterojunction field-effect transistors with delta -doped AlSb upper barriers by Werking, J.D., Bolognesi, C.R., Chang, L.-D., Nguyen, C., Hu, E.L., Kroemer, H.

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  4. 4
    InAs-AlSb quantum well as superconducting weak link with high critical current density

    InAs-AlSb quantum well as superconducting weak link with high critical current density by Nguyen, Chanh, Werking, James, Kroemer, Herbert, Hu, Evelyn L.

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  5. 5
    Charge injection using gate-induced-drain-leakage current for characterization of plasma edge damage in CMOS devices

    Charge injection using gate-induced-drain-leakage current for characterization of plasma edge damage in CMOS devices by Brozek, T., Rao, V.R., Sridharan, A., Werking, J.D., Chan, Y.D., Viswanathan, C.R.

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  6. 6
    Mechanisms of Localized Charge Injection: A Technique to Characterize Gate Edge Damage in MOS Transistors

    Mechanisms of Localized Charge Injection: A Technique to Characterize Gate Edge Damage in MOS Transistors by Sridharan, A., Rao, V.R., Brozek, T., Werking, J., Viswanathan, C.R.

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  7. 7
    Localized charge injection through the gate oxide over gate-drain overlap region: mechanism, device dependence, and application for device diagnostics

    Localized charge injection through the gate oxide over gate-drain overlap region: mechanism, device dependence, and application for device diagnostics by Brozek, T., Sridharan, A., Werking, J., Chan, Y.D., Viswanathan, C.R.

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  8. 8
    Business employment dynamics: tabulations by employer size

    Business employment dynamics: tabulations by employer size by Butani, Shail J., Clayton, Richard L., Kapani, Vinod, Spletzer, James R., Talan, David M., Werking, George S.

    Published in Monthly Labor Review
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  9. 9
    Business employment dynamics: tabulations by employer size: to measure quarterly employment growth by firm size, using Business Employment Dynamics data, BLS chooses dynamic-sizing as the official methodology.(Bureau of Labor Statistics )

    Business employment dynamics: tabulations by employer size: to measure quarterly employment growth by firm size, using Business Employment Dynamics data, BLS chooses dynamic-sizing... by Butani, Shail J, Clayton, Richard L, Kapani, Vinod, Spletzer, James R, Talan, David M, Werking, Jr., George S

    Published in Monthly labor review
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