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Trapping Effects at the Drain Edge in 600 V GaN-on-Si HEMTs
by
Wespel, M.
,
Polyakov, V. M.
,
Dammann, M.
,
Reiner, R.
,
Waltereit, P.
,
Quay, R.
,
Mikulla, M.
,
Ambacher, O.
Published in
IEEE transactions on electron devices
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Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices
by
Wespel, M.
,
Baeumler, M.
,
Polyakov, V.
,
Dammann, M.
,
Reiner, R.
,
Waltereit, P.
,
Quay, R.
,
Mikulla, M.
,
Ambacher, O.
Published in
Microelectronics and reliability
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Monolithically-Integrated Mulitlevel Inverter on Lateral GaN-on-Si Technology for High-Voltage Applications
by
Weiss, B.
,
Reiner, R.
,
Waltereit, P.
,
Muller, S.
,
Wespel, M.
,
Quay, R.
,
Ambacher, O.
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Conference Proceeding
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Degradation of 0.25μm GaN HEMTs under high temperature stress test
by
Dammann, M.
,
Baeumler, M.
,
Brückner, P.
,
Bronner, W.
,
Maroldt, S.
,
Konstanzer, H.
,
Wespel, M.
,
Quay, R.
,
Mikulla, M.
,
Graff, A.
,
Lorenzini, M.
,
Fagerlind, M.
,
van der Wel, P.J.
,
Roedle, T.
Published in
Microelectronics and reliability
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High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs
by
Wespel, M.
,
Dammann, M.
,
Polyakov, V.
,
Reiner, R.
,
Waltereit, P.
,
Weiss, B.
,
Quay, R.
,
Mikulla, M.
,
Ambacher, O.
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Benchmarking of Large-Area GaN-on-Si HFET Power Devices for Highly-Efficient, Fast-Switching Converter Applications
by
Reiner, R.
,
Waltereit, P.
,
Benkhelifa, F.
,
Muller, S.
,
Wespel, M.
,
Quay, R.
,
Schlechtweg, M.
,
Mikulla, M.
,
Ambacher, O.
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Reliability of GaN HEMTs with a 100 nm gate length under DC-stress tests
by
Dammann, M.
,
Baeumler, M.
,
Anto, R.
,
Konstanzer, H.
,
Bruckner, P.
,
Polyakov, V.
,
Wespel, M.
,
Muller, S.
,
Schwantuschke, D.
,
Maroldt, S.
,
Quay, R.
,
Mikulla, M.
,
Ambacher, O.
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Heterobi- and -trinuclear Complexes with an Amino(ethynyl)carbene as Bridging Ligand
by
Fischer, Helmut
,
Hartbaum, Cornelia
,
Wespel, Christiane
,
Dede, Markus
Published in
Zeitschrift für anorganische und allgemeine Chemie (1950)
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