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Radiation hardness of graphene and MoS2 field effect devices against swift heavy ion irradiation
by
Ochedowski, O.
,
Marinov, K.
,
Wilbs, G.
,
Keller, G.
,
Scheuschner, N.
,
Severin, D.
,
Bender, M.
,
Maultzsch, J.
,
Tegude, F. J.
,
Schleberger, M.
Published in
Journal of applied physics
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Radiation hardness of graphene and MoS{sub 2} field effect devices against swift heavy ion irradiation
by
Ochedowski, O.
,
Marinov, K.
,
Schleberger, M.
,
Wilbs, G.
,
Keller, G.
,
Tegude, F. J.
,
Scheuschner, N.
,
Maultzsch, J.
,
Severin, D.
,
Bender, M.
Published in
Journal of applied physics
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Radiation Hardness of Graphene and MoS2 Field Effect Devices Against Swift Heavy Ion Irradiation
by
Ochedowski, O
,
Marinov, K
,
Wilbs, G
,
Keller, G
,
Scheuschner, N
,
Severin, D
,
Bender, M
,
Maultzsch, J
,
Tegude, F J
,
Schleberger, M
Published in
arXiv.org
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Atomic Force Microscopy
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Electrical Properties
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Field Effect Transistors
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Graphene
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Heavy Ions
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Condensed Matter Physics, Superconductivity And Superfluidity
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Electric Conductivity
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Fluence
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Gev Range 01-10
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Ion Beams
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Ion Irradiation
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Irradiation
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Molybdenum Disulfide
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