High-κ Dielectric Materials for Microelectronics by Wallace, Robert M., Wilk, Glen D.

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Alternative Gate Dielectrics for Microelectronics by Wallace, Robert M., Wilk, Glen

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Wafer-Scale Atomic Layer-Deposited TeOx/Te Heterostructure P-Type Thin-Film Transistors by Tan, Pukun, Niu, Chang, Lin, Zehao, Lin, Jian-Yu, Long, Linjia, Zhang, Yizhi, Wilk, Glen, Wang, Haiyan, Ye, Peide D

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Wafer-Scale Atomic Layer-Deposited TeO x /Te Heterostructure P‑Type Thin-Film Transistors by Tan, Pukun, Niu, Chang, Lin, Zehao, Lin, Jian-Yu, Long, Linjia, Zhang, Yizhi, Wilk, Glen, Wang, Haiyan, Ye, Peide D.

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Hf O 2 and Al 2 O 3 gate dielectrics on GaAs grown by atomic layer deposition by Frank, Martin M., Wilk, Glen D., Starodub, Dmitri, Gustafsson, Torgny, Garfunkel, Eric, Chabal, Yves J., Grazul, John, Muller, David A.

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Growth and characterization of ultrathin zirconia dielectrics grown by ultraviolet ozone oxidation by Ramanathan, Shriram, Wilk, Glen D., Muller, David A., Park, Chang-Man, McIntyre, Paul C.

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Effect of oxygen stoichiometry on the electrical properties of zirconia gate dielectrics by Ramanathan, Shriram, Muller, David A., Wilk, Glen D., Park, Chang Man, McIntyre, Paul C.

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Nucleation and interface formation mechanisms in atomic layer deposition of gate oxides by Frank, Martin M., Chabal, Yves J., Wilk, Glen D.

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High-kappa gate dielectric materials by Wallace, R M, Wilk, G

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Atomic scale measurements of the interfacial electronic structure and chemistry of zirconium silicate gate dielectrics by Muller, David A., Wilk, Glen D.

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Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon by Frank, Martin M., Chabal, Yves J., Green, Martin L., Delabie, Annelies, Brijs, Bert, Wilk, Glen D., Ho, Mun-Yee, da Rosa, Elisa B. O., Baumvol, Israel J. R., Stedile, Fernanda C.

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(Invited) Current Status of High-k and Metal Gates in CMOS by Wilk, Glen D., Verghese, Mohith, Chen, Peijun, Maes, Jan Willem

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Hf O 2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition by Frank, Martin M., Wilk, Glen D., Starodub, Dmitri, Gustafsson, Torgny, Garfunkel, Eric, Chabal, Yves J., Grazul, John, Muller, David A.

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High-[kappa] Dielectric Materials for Microelectronics by Wallace, Robert M, Wilk, Glen D

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Investigation of Scaling Limits for PECVD SiN and ALD HfO2/Al2O3 Integrated MIM Capacitors by Dornisch, Dieter, Wilk, Glen, Li, Guangming, Ring, Kenneth M M., Howard, David J J., Racanelli, Marco

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Impact of Hf-Precursor Choice on Scaling and Performance of High-k Gate Dielectrics by Maes, Jan Willem, Fedorenko, Yanina, Delabie, Annelies, Ragnarsson, Lars-Aåke, Swerts, Johan, Nyns, Laura, Van Elshocht, Sven, Wang, Changgong, Wilk, Glen

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Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing by Fourmun Lee, Marcus, S., Shero, E., Wilk, G., Swerts, J., Maes, J.W., Blomberg, T., Delabie, A., Gros-Jean, M., Deloffre, E.

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Investigation of nitrided hafnium silicates for high-k dielectrics using photoelectron spectroscopy by MATHEW, Anoop, DEMIRKAN, Korhan, OPILA, R. L, WANG, Chang-Gong, MAES, Jan Willem, WILK, Glen

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Exploring the limits of gate dielectric scaling by Wallace, Robert M, Wilk, Glen D

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Identifying the most promising high-k gate dielectrics by Wallace, Robert M, Wilk, Glen D

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