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Erratum: “Electrical and optical properties of Ge–implanted 4H–SiC” [Appl. Phys. Lett. 74 , 540 (1999)]
by
Katulka, G.
,
Guedj, C.
,
Kolodzey, J.
,
Wilson, Consultant, R. G.
,
Swann, C.
,
Tsao, M. W.
,
Rabolt, J.
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Applied physics letters
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