Search Results - Windhorn, Kirsten

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  1. 1
    Growth of InAs-containing quantum wells for InP-based VCSELs emitting at 2.3 μm

    Growth of InAs-containing quantum wells for InP-based VCSELs emitting at 2.3 μm by Boehm, Gerhard, Grau, Markus, Dier, Oliver, Windhorn, Kirsten, Roenneberg, Enno, Rosskopf, Juergen, Shau, Robert, Meyer, Ralf, Ortsiefer, Markus, Amann, Markus-Christian

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  2. 2
    2.5-mW single-mode operation of 1.55-μm buried tunnel junction VCSELs

    2.5-mW single-mode operation of 1.55-μm buried tunnel junction VCSELs by Ortsiefer, M., Baydar, S., Windhorn, K., Bohm, G., Rosskopf, J., Shau, R., Ronneberg, E., Hofmann, W., Amann, M.-C.

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  3. 3
    Growth of InAs-containing quantum wells for InP-based VCSELs emitting at 2.3mum

    Growth of InAs-containing quantum wells for InP-based VCSELs emitting at 2.3mum by Boehm, Gerhard, Grau, Markus, Dier, Oliver, Windhorn, Kirsten, Roenneberg, Enno, Rosskopf, Juergen, Shau, Robert, Meyer, Ralf, Ortsiefer, Markus, Amann, Markus-Christian

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