On the temperature sensitivity of 1.5-/spl mu/m GaInNAsSb lasers by Bank, S.R., Goddard, L.L., Wistey, M.A., Yuen, H.B., Harris, J.S.

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Low-threshold continuous-wave 1.5-/spl mu/m GaInNAsSb lasers grown on GaAs by Bank, S.R., Wistey, M.A., Goddard, L.L., Yuen, H.B., Lordi, V., Harris, J.S.

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Height-selective etching for regrowth of self-aligned contacts using MBE by Burek, G.J., Wistey, M.A., Singisetti, U., Nelson, A., Thibeault, B.J., Bank, S.R., Rodwell, M.J.W., Gossard, A.C.

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On the temperature sensitivity of 1.5-[micro]m GaInNAsSb lasers by Bank, S.R, Goddard, L.L, Wistey, M.A, Yuen, H.B, Harris, J.S

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Contactless electroreflectance spectroscopy of Ga(In)NAs/GaAs quantum well structures containing Sb atoms by Kudrawiec, R., Gladysiewicz, M., Motyka, M., Misiewicz, J., Yuen, H.B., Bank, S.R., Wistey, M.A., Bae, H.P., Harris, James S.

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[Formula Omitted] Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth by Singisetti, U, Wistey, M.A, Burek, G.J, Baraskar, A.K, Thibeault, B.J, Gossard, A.C, Rodwell, M.J.W, Shin, Byungha, Kim, E.J, McIntyre, P.C, Yu, Bo, Yuan, Yu, Wang, D, Taur, Yuan, Asbeck, P, Lee, Yong-Ju

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hbox\hbox\hbox Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth by Singisetti, U., Wistey, M.A., Burek, G.J., Baraskar, A.K., Thibeault, B.J., Gossard, A.C., Rodwell, M.J.W., Byungha Shin, Kim, E.J., McIntyre, P.C., Bo Yu, Yu Yuan, Wang, D., Yuan Taur, Asbeck, P., Yong-Ju Lee

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Photoreflectance spectroscopy of a Ga0.62In0.38N0.026As0.954Sb0.02/GaAs single quantum well tailored at 1.5 μm by KUDRAWIEC, R, GLADYSIEWICZ, M, MISIEWICZ, J, YUEN, H. B, BANK, S. R, WISTEY, M. A, BAE, H. P, HARRIS, James S

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Recent Progress on 1.55- \mu} Dilute-Nitride Lasers by Bank, S.R., Hopil Bae, Goddard, L.L., Yuen, H.B., Wistey, M.A., Kudrawiec, R., Harris, J.S.

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Recent Progress on 1.55- [mu]m Dilute-Nitride Lasers by Bank, S R, Bae, Hopil, Goddard, L L, Yuen, H B, Wistey, M A, Kudrawiec, R, Harris, J S

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Photoreflectance spectroscopy of a Ga 0.62In 0.38N 0.026As 0.954Sb 0.02/GaAs single quantum well tailored at 1.5 μm by Kudrawiec, R., Gladysiewicz, M., Misiewicz, J., Yuen, H.B., Bank, S.R., Wistey, M.A., Bae, H.P., Harris, James S.

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Using beam flux monitor as Langmuir probe for plasma-assisted molecular beam epitaxy by Wistey, M. A., Bank, S. R., Yuen, H. B., Harris, J. S., Oye, M. M., Holmes, A. L.

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Ultra-Low Resistance Ohmic Contacts to InGaAs/InP by Singisetti, U., Crook, A.M., Lind, E., Zimmerman, J.D., Wistey, M.A., Gossard, A.C., Rodwell, M.J.W.

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Low-threshold continuous-wave 1.5-[mu]m GaInNAsSb lasers grown on GaAs by Bank, S.R, Wistey, M.A, Goddard, L.L, Yuen, H.B, Lordi, V, Harris, J.S

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Enhancement mode In0.53Ga0.47As MOSFET with self-aligned epitaxial source/drain regrowth by Singisetti, U., Wistey, M.A., Burek, G.J., Baraskar, A.K., Cagnon, J., Thibeault, B., Gossard, A.C., Stemmer, S., Rodwell, M.J.W., Eunji Kim, Byungha Shin, McIntyre, P.C., Yong-Ju Lee

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Effect of surface preparations on contact resistivity of TiW to highly doped n-InGaAs by Jain, V., Baraskar, A.K., Wistey, M.A., Singisetti, U., Griffith, Z., Lobisser, E., Thibeault, B.J., Gossard, A.C., Rodwell, M.

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The role and suppression of carrier leakage in 1.5 /spl mu/m GaInNAsSb/GaAs lasers by Bank, S.R., Wistey, M.A., Yuen, H.B., Goddard, L.L., Harris, J.S.

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Monolithic GaInNAsSb vertical cavity surface emitting lasers at 1534nm by Wistey, M.A., Bank, S.R., Hopil Bae, Yuen, H.B., Pickett, E.R., Harris, J.S.

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Low-threshold continuous-wave 1.55-μm GaInNAsSb lasers by Bank, S.R., Bae, H.P., Yuen, H.B., Wistey, M.A., Goddard, L.L., Harris, J.S., Kudrawiec, R., Gladysiewicz, M., Motyka, M., Misiewicz, J.

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Electroabsorption of GaInNAs and GaInNAsSb quantum wells at 1300 and 1550 nm by Lordi, V., Yuen, H.B., Bank, S.R., Wistey, M.A., Harris, J.S.

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