Search Results - Woelk, E.G

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  1. 1
    Measurement of low resistive ohmic contacts on semiconductors

    Measurement of low resistive ohmic contacts on semiconductors by Woelk, E.G., Krautle, H., Beneking, H.

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  2. 2
    High temperature CVD systems to grow GaN or SiC based structures

    High temperature CVD systems to grow GaN or SiC based structures by Beccard, R, Schmitz, D, Woelk, E.G, Strauch, G, Makarov, Y, Heuken, M, Deschler, M, Juergensen, H

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  3. 3
    SiC and group III nitride growth in MOVPE production reactors

    SiC and group III nitride growth in MOVPE production reactors by Beccard, R., Schmitz, D., Woelk, E.G., Strauch, G., Jürgensen, H.

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  4. 4
    The optimization of InxGa1-xAs and InP growth conditions by CBE

    The optimization of InxGa1-xAs and InP growth conditions by CBE by SHERWIN, M. E, MUNNS, G. O, ELTA, M. E, WOELK, E. G, CRARY, S. B, TERRY, F. L, HADDAD, G. I

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  5. 5
    The optimization of In xGa 1−xAs and InP growth conditions by CBE

    The optimization of In xGa 1−xAs and InP growth conditions by CBE by Sherwin, M.E., Munns, G.O., Elta, M.E., Woelk, E.G., Crary, S.B., Terry, F.L., Haddad, G.I.

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  6. 6
    The design of an ECR plasma system and its application to InP grown by CBE

    The design of an ECR plasma system and its application to InP grown by CBE by Sherwin, M.E., Munns, G.O., Woelk, E.G., Drummond, T.J., Elta, M.E., Terry, F.L., Haddad, G.I.

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  7. 7
    High temperature growth of SiC and group III nitride structures in production reactors

    High temperature growth of SiC and group III nitride structures in production reactors by Schmitz, D., Beccard, R., Woelk, E.G., Strauch, G., Juergensen, H.

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