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Search Results - Woelk, E.G.
Search Results - Woelk, E.G.
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Measurement of low resistive ohmic contacts on semiconductors
by
Woelk, E.G.
,
Krautle, H.
,
Beneking, H.
Published in
IEEE transactions on electron devices
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High temperature CVD systems to grow GaN or SiC based structures
by
Beccard, R
,
Schmitz, D
,
Woelk, E.G
,
Strauch, G
,
Makarov, Y
,
Heuken, M
,
Deschler, M
,
Juergensen, H
Published in
Materials science & engineering. B, Solid-state materials for advanced technology
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SiC and group III nitride growth in MOVPE production reactors
by
Beccard, R.
,
Schmitz, D.
,
Woelk, E.G.
,
Strauch, G.
,
Jürgensen, H.
Published in
Diamond and related materials
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The optimization of InxGa1-xAs and InP growth conditions by CBE
by
SHERWIN, M. E
,
MUNNS, G. O
,
ELTA, M. E
,
WOELK, E. G
,
CRARY, S. B
,
TERRY, F. L
,
HADDAD, G. I
Published in
Journal of crystal growth
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The optimization of In xGa 1−xAs and InP growth conditions by CBE
by
Sherwin, M.E.
,
Munns, G.O.
,
Elta, M.E.
,
Woelk, E.G.
,
Crary, S.B.
,
Terry, F.L.
,
Haddad, G.I.
Published in
Journal of crystal growth
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The design of an ECR plasma system and its application to InP grown by CBE
by
Sherwin, M.E.
,
Munns, G.O.
,
Woelk, E.G.
,
Drummond, T.J.
,
Elta, M.E.
,
Terry, F.L.
,
Haddad, G.I.
Published in
Journal of crystal growth
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High temperature growth of SiC and group III nitride structures in production reactors
by
Schmitz, D.
,
Beccard, R.
,
Woelk, E.G.
,
Strauch, G.
,
Juergensen, H.
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