Vertically Oriented Germanium Nanowires Grown from Gold Colloids on Silicon Substrates and Subsequent Gold Removal by Woodruff, Jacob H., Ratchford, Joshua B., Goldthorpe, Irene A., McIntyre, Paul C., Chidsey

Get full text

Nature of germanium nanowire heteroepitaxy on silicon substrates by Jagannathan, Hemanth, Deal, Michael, Nishi, Yoshio, Woodruff, Jacob, Chidsey, Christopher, McIntyre, Paul C.

Get full text

Enhanced nucleation mechanism in ruthenium atomic layer deposition: Exploring surface termination and precursor ligand effects with RuCpEt(CO)2 by Rothman, Amnon, Seo, Seunggi, Woodruff, Jacob, Kim, Hyungjun, Bent, Stacey F.

Get full text

Pulsed chemical vapor deposition for crystalline aluminum nitride thin films and buffer layers on silicon and silicon carbide by McLeod, Aaron J., Ueda, Scott T., Lee, Ping C., Spiegelman, Jeff, Kanjolia, Ravindra, Moinpour, Mansour, Woodruff, Jacob, Kummel, Andrew C.

Get full text

Synthesis of Micron-Sized WS 2 Crystallites Using Atomic Layer Deposition and Sulfur Annealing by Mullapudi, Kamesh, Addou, Rafik, Dezelah, Charles. L., Moser, Daniel F., Kanjolia, Ravindra K., Woodruff, Jacob H., Conley, John. F.

Get full text

The role of oxide formation on insulating versus metallic substrates during Co and Ru selective ALD by Wolf, Steven, Breeden, Michael, Ueda, Scott, Woodruff, Jacob, Moinpour, Mansour, Kanjolia, Ravindra, Kummel, Andrew

Get full text

Improved properties of atomic layer deposited ruthenium via postdeposition annealing by Hayes, Michael, Jenkins, Melanie A., Woodruff, Jacob, Moser, Daniel F., Dezelah, Charles L., Conley, John F.

Get full text

Tris(dimethylamido)aluminum(III) and N2H4: Ideal precursors for the low-temperature deposition of large grain, oriented c-axis AlN on Si via atomic layer annealing by Ueda, Scott T., McLeod, Aaron, Alvarez, Dan, Moser, Daniel, Kanjolia, Ravindra, Moinpour, Mansour, Woodruff, Jacob, Kummel, Andrew C.

Get full text

Synthesis of Micron-Sized WS2 Crystallites Using Atomic Layer Deposition and Sulfur Annealing by Mullapudi, Kamesh, Addou, Rafik, Dezelah, Charles. L., Moser, Daniel F., Kanjolia, Ravindra K., Woodruff, Jacob H., Conley, John. F.

Get full text

Impact of the precursor chemistry and process conditions on the cell-to-cell variability in 1T-1R based HfO2 RRAM devices by Grossi, Alessandro, Perez, Eduardo, Zambelli, Cristian, Olivo, Piero, Miranda, Enrique, Roelofs, Robin, Woodruff, Jacob, Raisanen, Petri, Li, Wei, Givens, Michael, Costina, Ioan, Schubert, Markus Andreas, Wenger, Christian

Get full text

Self-Catalyzed, Low-Temperature Atomic Layer Deposition of Ruthenium Metal Using Zero-Valent Ru(DMBD)(CO)3 and Water by Gao, Zhengning, Le, Duy, Khaniya, Asim, Dezelah, Charles L, Woodruff, Jacob, Kanjolia, Ravindra K, Kaden, William E, Rahman, Talat S, Banerjee, Parag

Get full text

The Importance of Decarbonylation Mechanisms in the Atomic Layer Deposition of High‐Quality Ru Films by Zero‐Oxidation State Ru(DMBD)(CO)3 by Schneider, Joel R., Paula, Camila, Lewis, Jacqueline, Woodruff, Jacob, Raiford, James A., Bent, Stacey F.

Get full text

Experimental and theoretical determination of the role of ions in atomic layer annealing by Ueda, Scott T, McLeod, Aaron, Jo, Youhwan, Zhang, Zichen, Spiegelman, Jacob, Spiegelman, Jeff, Alvarez, Dan, Moser, Daniel, Kanjolia, Ravindra, Moinpour, Mansour, Woodruff, Jacob, Cho, Kyeongjae, Kummel, Andrew C

Get full text

Proximity Effects of the Selective Atomic Layer Deposition of Cobalt on the Nanoscale: Implications for Interconnects by Breeden, Michael, Wang, Victor, Spiegelman, Jacob, Anurag, Ashay, Wolf, Steven F., Moser, Daniel, Kanjolia, Ravindra K., Moinpour, Mansour, Woodruff, Jacob, Nemani, Srinivas, Wong, Keith, Winter, Charles H., Kummel, Andrew C.

Get full text

Device characteristics of a 17.1% efficient solar cell deposited by a non-vacuum printing method on flexible foil by Brown, G., Stone, P., Woodruff, J., Cardozo, B., Jackrel, D.

Request full text

Impact of the precursor chemistry and process conditions on the cell-to-cell variability in 1T-1R based HfO 2 RRAM devices by Grossi, Alessandro, Perez, Eduardo, Zambelli, Cristian, Olivo, Piero, Miranda, Enrique, Roelofs, Robin, Woodruff, Jacob, Raisanen, Petri, Li, Wei, Givens, Michael, Costina, Ioan, Schubert, Markus Andreas, Wenger, Christian

Get full text

Selective Co ALD for Chiplet-to-Wafer and Wafer-to-Wafer Bonding by Kuo, Cheng-Hsuan, Manley, Madison, Pal, Dipayan, Sahay, Rohan, Kanjolia, Ravindra, Woodruff, Jacob, Bakir, Muhannad, Kummel, Andrew C., Moinpour, Mansour, Spiegelman, Jeff

Request full text

Ru ALD With Bulk-Like Resistivity for Interconnects by Breeden, Michael, Wang, Victor, Kanjolia, Ravindra, Moinpour, Mansour, Woodruff, Jacob, Simka, Harsono, Kummel, Andrew

Request full text

Reverse Templating Effects of Low-Resistivity Ru ALD on Sputtered Ru by Wang, Victor, Kuo, Chenghsuan, Kanjolia, Ravindra, Moinpour, Mansour, Woodruff, Jacob, Simka, Harsono, Kummel, Andrew C.

Request full text

Promixity Effect of Selective Co ALD on the Nanoscale by Breeden, Michael, Wolf, Steven, Anurag, Ashay, Wang, Victor, Moser, Daniel, Kanjolia, Ravi, Moinpour, Mansour, Woodruff, Jacob, Kummel, Andrew

Request full text