High-energy proton irradiation effects on AlGaN/GaN high-electron mobility transistors by Luo, B., Johnson, J. W., Ren, F., Allums, K. K., Abernathy, C. R., Pearton, S. J., Dwivedi, R., Fogarty, T. N., Wilkins, R., Dabiran, A. M., Wowchack, A. M., Polley, C. J., Chow, P. P., Baca, A. G.

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Surface passivation of AlGaN/GaN HEMTs using MBE-grown MgO or Sc2O3 by Luo, B, Johnson, J.W, Gila, B.P, Onstine, A, Abernathy, C.R, Ren, F, Pearton, S.J, Baca, A.G, Dabiran, A.M, Wowchack, A.M, Chow, P.P

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Electronic states in modulation doped p -AlGaN/GaN superlattices by Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Osinsky, A. V., Norris, P. E., Pearton, S. J., Van Hove, J., Wowchack, A. M., Chow, P. P.

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Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE by Johnson, J.W, Baca, A.G, Briggs, R.D, Shul, R.J, Wendt, J.R, Monier, C, Ren, F, Pearton, S.J, Dabiran, A.M, Wowchack, A.M, Polley, C.J, Chow, P.P

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High temperature characteristics of GaN-based heterojunction bipolar transistors and bipolar junction transistors by Cao, X.A, Van Hove, J.M, Klaassen, J.J, Polley, C.J, Wowchack, A.M, Chow, P.P, King, D.J, Ren, F, Dang, G, Zhang, A.P, Abernathy, C.R, Pearton, S.J

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npn AlGaN/GaN heterojunction bipolar transistors and GaN bipolar junction transistors with regrown C-doped GaAs in the base regions by Dang, G, Luo, B, Zhang, A.P, Cao, X.A, Ren, F, Pearton, S.J, Cho, H, Hobson, W.S, Lopata, J, van Hove, J.M, Klaassen, J.J, Polley, C.J, Wowchack, A.M, Chow, P.P, King, D.J

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Surface passivation of AlGaN/GaN HEMTs using MBE-grown MgO or Sc 2O 3 by Luo, B, Johnson, J.W, Gila, B.P, Onstine, A, Abernathy, C.R, Ren, F, Pearton, S.J, Baca, A.G, Dabiran, A.M, Wowchack, A.M, Chow, P.P

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Uniformity and high temperature performance of X-band nitride power HEMTs fabricated from 2-inch epitaxy by Hickman, R, Van Hove, J.M, Chow, P.P, Klaassen, J.J, Wowchack, A.M, Polley, C.J

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