High-Performance AlN/GaN HEMTs on Sapphire Substrate With an Oxidized Gate Insulator by Chabak, K. D., Walker, Dennis E., Johnson, M. R., Crespo, A., Dabiran, A. M., Smith, D. J., Wowchak, A. M., Tetlak, S. K., Kossler, M., Gillespie, J. K., Fitch, R. C., Trejo, M.

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Indium-rich InGaN epitaxial layers grown pseudomorphically on a nano-sculpted InGaN template by Xue, J J, Chen, D J, Liu, B, Lu, H, Zhang, R, Zheng, Y D, Cui, B, Wowchak, Andrew M, Dabiran, Amir M, Xu, K, Zhang, J P

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High-indium-content InGaN quantum-well structure grown pseudomorphically on a strain-relaxed InGaN template layer by Liu, Yanli, Chen, Dunjun, Xue, Junjun, Liu, Bin, Lu, Hai, Zhang, Rong, Zheng, Youdou, Xu, Ke, Zhang, Jinping, Cui, Bentao, Wowchak, Andrew M., Dabiran, Amir M.

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Ti/Al/Mo/Au Ohmic contacts to all-binary AlN/GaN high electron mobility transistors by Wang, Liang, Adesida, Ilesanmi, Dabiran, Amir M., Wowchak, Andrew M., Chow, Peter P.

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Ti/Al/Mo/Au Ohmic contacts to all-binary AlN/GaN high electronmobility transistors by Wang, Liang, Adesida, Ilesanmi, Dabiran, Amir M., Wowchak, Andrew M., Chow, Peter P.

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Injection and Avalanche Electroluminescence of \hbox} \hbox} \hbox} \hbox} \hbox Multiple Quantum Wells by Sheng-Kun Zhang, Wubao Wang, Alfano, R.R., Dabiran, A.M., Osinsky, A., Wowchak, A.M., Hertog, B., Chow, P.P.

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