The impact of intrinsic device fluctuations on CMOS SRAM cell stability by Bhavnagarwala, A.J., Xinghai Tang, Meindl, J.D.

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Intrinsic MOSFET parameter fluctuations due to random dopant placement by Xinghai Tang, De, V.K., Meindl, J.D.

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A physical alpha-power law MOSFET model by Bowman, K.A., Austin, B.L., Eble, J.C., Xinghai Tang, Meindl, J.D.

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Impact of extrinsic and intrinsic parameter fluctuations on CMOS circuit performance by Bowman, K.A., Xinghai Tang, Eble, J.C., Menldl, J.D.

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A circuit-level perspective of the optimum gate oxide thickness by Bowman, K.A., Lihui Wang, Xinghai Tang, Meindl, J.D.

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Oxide Thickness Scaling Limit for Optimum CMOS Logic Circuit Performance by Bowman, K.A., Lihui Wang, Xinghai Tang, Meindl, J.D.

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The impact of stochastic dopant and interconnect distributions on gigascale integration by Meindl, J.D., De, V.K., Wills, D.S., Eble, J.C., Xinghai Tang, Davis, J.A., Austin, B., Bhavnagarwala, A.J.

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SOI MOSFET fluctuation limits on gigascale integration (GSI) by Xinghai Tang, De, V.K., Lihui Wang, Meindl, J.D.

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New Discovery of the 341 Ma Gabbro at Xiongcun District in the Southern Margin of Lhasa Terrane, Tibet by LANG, Xinghai, LIU, Dong, DENG, Yulin, TANG, Juxing, XIE, Fuwei, YANG, Zongyao, CUI, Zhiwei, WANG, Xuhui, LI, Zhijun, ZHANG, Zhong, ZHANG, Jinshu, HUANG, Yong

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Impact of extrinsic and intrinsic parameter variations on CMOS system on a chip performance by Bowman, K.A., Xinghai Tang, Eble, J.C., Meindl, J.D.

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A low power transregional MOSFET model for complete power-delay analysis of CMOS gigascale integration (GSI) by Austin, B.L., Bowman, K.A., Xinghai Tang, Meindl, J.D.

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Random MOSFET parameter fluctuation limits to gigascale integration (GSI) by De, Vivek K, Tang, Xinghai, Meindl, James D

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MOSFET Fluctuation Limits on Gigascale Integration (GSI) by Tang, X., De, V.K., Meindl, J.D.

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Random MOSFET parameter fluctuation limits to gigascale integration (GSI) by De, V.K., Xinghai Tang, Meindl, J.D.

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Effects of random MOSFET parameter fluctuations on total power consumption by Xinghai Tang, De, V.K., Meindl, J.D.

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Scaling limits of Si MOSFET technology imposed by random parameter fluctuations by De, V.K., Xinghai Tang, Meindl, J.D.

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A physical alpha-power law MOSFET model by Bowman, Keith A., Austin, Blanca L., Eble, John C., Tang, Xinghai, Meindl, James D.

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Apatite and zircon geochemistry of Jurassic porphyries in the Xiongcun district, southern Gangdese porphyry copper belt: Implications for petrogenesis and mineralization by Xie, Fuwei, Tang, Juxing, Chen, Yuchuan, Lang, Xinghai

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Insights into hydrological drought characteristics using GNSS-inferred large-scale terrestrial water storage deficits by Jiang, Zhongshan, Hsu, Ya-Ju, Yuan, Linguo, Cheng, Shuai, Feng, Wei, Tang, Miao, Yang, Xinghai

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U–Pb and Re–Os geochronological evidence for the Jurassic porphyry metallogenic event of the Xiongcun district in the Gangdese porphyry copper belt, southern Tibet, PRC by Lang, Xinghai, Tang, Juxing, Li, Zhijun, Huang, Yong, Ding, Feng, Yang, Huanhuan, Xie, Fuwei, Zhang, Li, Wang, Qin, Zhou, Yun

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