SPICE MODELING OF PHASE-CHANGE RESISTANCE IN PCM by YANG, HONG, YINYIN, LIN, TINGAO, TANG, BOMY, CHEN

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A nano-scale-sized 3D element for phase change memories by Lv, Hangbing, Lin, Yinyin, Zhou, Peng, Tang, Tingao, Qiao, Baowei, Lai, Yunfeng, Feng, Jie, Chen, Bomy

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Endurance enhancement of Cu-oxide based resistive switching memory with Al top electrode by Lv, Hangbing, Wang, Ming, Wan, Haijun, Song, Yali, Luo, Wenjing, Zhou, Peng, Tang, Tingao, Lin, Yinyin, Huang, R., Song, S., Wu, J. G., Wu, H. M., Chi, M. H.

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Self-sacrificial templating synthesis of self-assembly 3D layered double hydroxide nanosheets using nano-SiO 2 under facile conditions by Li, Cunjun, Lu, Hong, Lin, Yinyin, Xie, Xiangli, Wang, Hai, Wang, Linjiang

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Investigations of Conduction Mechanisms of the Self-Rectifying n+Si-HfO2-Ni RRAM Devices by Lu, Dongyi, Zhao, Yadong, Anh, Tran Xuan, Yu, Yu Hong, Huang, Daming, Lin, Yinyin, Ding, Shi-Jin, Wang, Peng-Fei, Li, Ming-Fu

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CONSTRAINTS AND RESOLUTION FOR PHASE CHANGE MATERIALS AND MEMORY DEVICE SCALING by YANG, HONG, YINYIN, LIN, YUN, LING, LIANZHANG, LAI, JIE, FENG, YUNFENG, LAI, BAOWEI, QIAO, TINGAO, TANG, BINGCHU, CAI, BOMY, CHEN

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Multi-bit storage in reset process of Phase Change Access Memory (PRAM) by Zhang, Yi, Feng, Jie, Zhang, Yin, Zhang, Zufa, Lin, Yinyin, Tang, Ting'ao, Cai, Bingchu, Chen, Bomy

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Investigations of Conduction Mechanisms of the Self-Rectifying n + Si-HfO 2 –Ni RRAM Devices by Lu, Dongyi, Zhao, Yadong, Anh, Tran Xuan, Yu, Yu Hong, Huang, Daming, Lin, Yinyin, Ding, Shi-Jin, Wang, Peng-Fei, Li, Ming-Fu

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Investigations of Conduction Mechanisms of the Self-Rectifying n super(+)Si-HfO sub(2)- Ni RRAM Devices by Lu, Dongyi, Zhao, Yadong, Anh, Tran Xuan, Yu, Yu Hong, Huang, Daming, Lin, Yinyin, Ding, Shi-Jin, Wang, Peng-Fei, Li, Ming-Fu

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Second harmonic generation in transparent KTiOPO4/SiO2 nanocomposite glasses prepared by the sol-gel method by Li, Donglin, Lin, Yinyin, Zhang, Liangying, Yao, Xi

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PREPARATION AND ELECTRICAL PROPERTIES OF Pt/ZrO2/Si AND Pt/PLZT/ZrO2/Si STRUCTURES by CHENG, JI, YINYIN, LIN, TING-AO, TANG

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A 0.13 µm 8 Mb Logic-Based Cu Si O ReRAM With Self-Adaptive Operation for Yield Enhancement and Power Reduction by Xue, Xiaoyong, Jian, Wenxiang, Yang, Jianguo, Xiao, Fanjie, Chen, Gang, Xu, Shuliu, Xie, Yufeng, Lin, Yinyin, Huang, Ryan, Zou, Qingtian, Wu, Jingang

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Self-sacrificial templating synthesis of self-assembly 3D layered double hydroxide nanosheets using nano-SiO2 under facile conditionsElectronic supplementary information (ESI) avai... by Li, Cunjun, Lu, Hong, Lin, Yinyin, Xie, Xiangli, Wang, Hai, Wang, Linjiang

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ANALYSES OF C-V CHARACTERISTICS OF MFIS DEVICE UNDER HIGH AND LOW FREQUENCY by CHENG, JI, YINYIN, LIN, TING-AO, TANG

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An improved technology for fabrication of integrated Pb(Zr, Ti)O3 ferroelectric capacitor by Whining, Huang, Yinyin, Lin, Tingao, Tang

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Dual Resistive Switching Characteristics in CuxSiyO Resistive Memory by Yang, Lingming, Meng, Ying, Song, Yali, Liu, Yi, Dong, Qing, Lin, Yinyin, Huang, Ryan, Zou, Qingtian, Wu, Jingang

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Si–Sb–Te films for phase-change random access memory by Qiao, Baowei, Feng, Jie, Lai, Yunfeng, Cai, Yanfei, Lin, Yinyin, Tang, Ting-ao, Cai, Bingchu, Chen, Bomy

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Properties of p - n heterojunction diode based on Ge 2 Sb 2 Te 5 and its application for phase change random access memory by Tang, Li, Zhou, Peng, Wan, Haijun, Jin, Gang, Chen, B. A., Tang, Ting-ao, Lin, Yinyin

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MULTI-BIT STORAGE BASED ON CHALCOGENIDE THIN FILM TRANSISTOR FOR HIGH DENSITY NONVOLATILE MEMORY APPLICATION by CAI, YANFEI, ZHOU, PENG, TANG, TINGAO, GAO, CHARLES, LIN, YINYIN

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Ferroelectric properties of Pr and Nb co-substituted Sr 0.8Bi 2.2Ta 2O 9 thin films by Shi, Haifeng, Lin, Yinyin, Tang, Ting-Ao

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