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Effect of Germanium Preamorphization Implant on Performance and Gate-Induced Drain Leakage in SiGe Channel pFET
by
Tiwari, Vishal A.
,
Young Way Teh
,
Jaeger, Daniel
,
Divakaruni, Rama
,
Nair, Deleep R.
Published in
IEEE electron device letters
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A New Integration Scheme to Prevent Chemical Attack on Floating Polysilicon Gate of Non-Volatile Memory
by
Yang, Yuming
,
Kong, KIM Foong
,
Teh, Young Way
,
Zhou, Guanyu
,
Yu, Nianhong
,
Yu, Kankan
Published in
ECS transactions
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Strain for CMOS performance improvement
by
Chan, V.
,
Ken Rim
,
Meikei Ieong
,
Sam Yang
,
Rajeev Malik
,
Young Way Teh
,
Min Yang
,
Qiqing
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High performance 0.1μm CMOS device with suppressed parasitic junction capacitance and junction leakage current
by
HYUN SIK KIM
,
SHIANG YANG ONG
,
SARKAR, Manju
,
YOUNG WAY TEH
,
SHESH MANI PANDEY
,
BENISTANT, Francis
,
QUEK, Elgin
,
BHAT, Mousumi
,
CHU, Sanford
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