High On/Off Current Ratio p-InGaN/AlGaN/GaN HEMTs by Deguchi, T., Kikuchi, T., Arai, M., Yamasaki, K., Egawa, T.

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Extraction of interface state density at SiO2/SiC interfaces based on impedance measurements with different temperatures by Yoshida, Nozomi, Waki, Eiji, Arai, Manabu, Yamasaki, Kimiyoshi, Han, Jae-Hoon, Takenaka, Mitsuru, Takagi, Shinichi

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Submicrometer gold interconnect wiring by sidewall electroplating technology by HIRANO, M, AOYAMA, S, YAMASAKI, K

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Deep Level Transient Spectroscopy of Bulk Traps and Interface States in Si MOS Diodes by Yamasaki, Kimiyoshi, Yoshida, Minoru, Sugano, Takuo

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Characterization of a thin Si-implanted and rapid thermal annealed n-GaAs layer by SUGITANI, S, YAMASAKI, K, YAMAZAKI, H

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Determination of the interface states in GaAs MOS diodes by deep-level transient spectroscopy by Yamasaki, Kimiyoshi, Sugano, Takuo

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Annealing Behavior of Damage Introduced in GaAs by Reactive Ion Beam Etching by Yamane, Yasuro, Yamasaki, Kimiyoshi, Mizutani, Takashi

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Highly integrated three-dimensional MMIC technology applied to novel masterslice GaAs- and Si-MMICs by Tokumitsu, T., Hirano, N., Yamasaki, K., Yamaguchi, C., Nishikawa, K., Aikawa, M.

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Optical properties of oxygen-ion-implanted benzocyclobutene films by Mada, Yoichi, Sugitani, Suehiro, Arai, Kunihiro, Yamasaki, Kimiyoshi

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Three-dimensional passive circuit technology for ultra-compact MMICs by Hirano, H., Nishikawa, K., Toyoda, I., Aoyama, S., Sugitani, S., Yamasaki, K.

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N + Self-Aligned MESFET for GaAs LSIs by Yamasaki, Kimiyoshi, Asai, Kazuyoshi, Kurumada, Katsuhiko

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Threshold voltage shift in 0.1 μm self-aligned-gate GaAs MESFETs under bias stress and related degradation of ultra-high-speed digital ICs by Fukai, Yoshino K., Yamasaki, Kimiyoshi, Nishimura, Kazumi

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Asynchronous transfer mode switching LSI chips with 10-Gb/s serial I/O ports by Hino, S., Togashi, M., Yamasaki, K.

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A double lightly doped drain (D-LDD) structure H-MESFET for MMIC applications by Yamane, T., Onodera, K., Nittono, T., Nishimura, K., Yamasaki, K., Kanda, A.

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Three-dimensional interconnect technology for ultra-compact MMICs by Hirano, Makoto, Nishikawa, Kenjiro, Toyoda, Ichihiko, Aoyama, Shinji, Sugitani, Suehiro, Yamasaki, Kimiyoshi

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Multigigabit multichannel optical interconnection module for broadband switching system by Nishikido, J., Fujita, S., Arai, Y., Akahori, Y., Hino, S., Yamasaki, K.

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Buried p-layer SAINT for very high-speed GaAs LSI's with submicrometer gate length by Yamasaki, K., Kato, N., Hirayama, M.

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High Performance 0.1-μm-Self-Aligned-Gate GaAs MESFET Technology by Nishimura, Kazumi, Onodera, Kiyomitsu, Aoyama, Shinji, Tokumitsu, Masami, Yamasaki, Kimiyoshi

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Phosphorus coimplantation effects on optimum annealing temperature in Si-implanted GaAs by Sugitani, Suehiro, Hyuga, Fumiaki, Yamasaki, Kimiyoshi

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Determination of effective saturation velocity in n+self-aligned GaAs MESFET's with submicrometer gate lengths by Yamasaki, K., Hirayama, M.

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