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Field-Effect Mobility of InAs Surface Channel nMOSFET With Low D Scaled Gate-Stack
by
Shih-Wei Wang
,
Vasen, Timothy
,
Doornbos, Gerben
,
Oxland, Richard
,
Shang-Wen Chang
,
Xu Li
,
Contreras-Guerrero, Rocio
,
Holland, Martin
,
Chien-Hsun Wang
,
Edirisooriya, Madhavie
,
Rojas-Ramirez, Juan Salvador
,
Ramvall, Peter
,
Thoms, Stephen
,
Macintyre, Douglas S.
,
Vellianitis, Georgios
,
Hsieh, Gordon C. H.
,
Yang-Sih Chang
,
Yin, Kaimin M.
,
Yee-Chia Yeo
,
Diaz, Carlos H.
,
Droopad, Ravi
,
Thayne, Iain G.
,
Passlack, Matthias
Published in
IEEE transactions on electron devices
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Reports Of Special Branch Made Between 1929-1949: Mr. Chang Hsi-Yang Alias Sih Yang
by
Mr. Chang Hsi-Yang
,
alias Sih Yang
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Ieee Transactions On Electron Devices
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Capacitance
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Frequency Measurement
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Logic Gates
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Mosfet
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