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Layered material GeSe and vertical GeSe/MoS2 p-n heterojunctions
by
Yap, Wui Chung
,
Yang, Zhengfeng
,
Mehboudi, Mehrshad
,
Yan, Jia-An
,
Barraza-Lopez, Salvador
,
Zhu, Wenjuan
Published in
Nano research
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Ferroelectric transistors with monolayer molybdenum disulfide and ultra-thin aluminum-doped hafnium oxide
by
Yap, Wui Chung
,
Jiang, Hao
,
Liu, Jialun
,
Xia, Qiangfei
,
Zhu, Wenjuan
Published in
Applied physics letters
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Layered material GeSe and vertical GeSe/MoS2 p-n heterojunctions
by
Wui Chung Yap
,
Yang, Zhengfeng
,
Mehboudi, Mehrshad
,
Jia-An, Yan
,
Barraza-Lopez, Salvador
,
Zhu, Wenjuan
Published in
arXiv.org
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纳米研究:英文版
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Molybdenum Disulfide
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Semiconductor Devices
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Alignment
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Cmos
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Conduction Bands
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Field Effect Transistors
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Metal Oxide Semiconductors
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