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Search Results - Yaroshetskiĭ, I D
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Porous semiconductors: why only silicon-based? A possible explanation
by
Goryachev, D N
,
Belyakov, L V
,
Sreseli, O M
,
Yaroshetskii, I D
Published in
Semiconductor science and technology
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Photoluminescence and Raman scattering from GaN layers grown on GaAs and GaP substrates
by
Zinov'ev, N N
,
Andrianov, A V
,
Averbukh, B Y
,
Yaroshetskii, I D
,
Cheng, S T
,
Jenkins, L C
,
Hooper, S E
,
Foxon, C T
,
Orton, J W
Published in
Semiconductor science and technology
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Effect of non-equilibrium acoustic phonons on radiative recombination in semiconductors
by
Arakin, V.I.
,
Zinov'ev, N.N.
,
Parmanbekov, U.
,
Yaroshetskii, I.D.
Published in
Solid state communications
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Solomon Meerovich Ryvkin (Obituary)
by
Alferov, Zhores I
,
Vul, B M
,
Zakharchenya, Boris P
,
Prokhorov, A M
,
Tuchkevich, V M
,
Flerov, G N
,
Yaroshetskiĭ, I D
Published in
Soviet physics. Uspekhi
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Frequency shift and change in the spectrum of picosecond light pulses scattered by optically induced gratings in semiconductors
by
Nekrasov, V Yu
,
Polyakov, A A
,
Trukhin, V N
,
Yaroshetskiĭ, I D
Published in
Soviet journal of quantum electronics
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Very-fast-response uncooled photodetector based on intraband μ-photoconductivity
by
Beregulin, E V
,
Valov, P M
,
Ryvkin, S M
,
Tarkhin, D V
,
Yaroshetskiĭ, I D
Published in
Soviet journal of quantum electronics
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Instruments for detection of infrared laser radiation pulses based on the photon drag of carriers in semiconductors
by
Valov, P M
,
Goncharenko, K V
,
Markov, Yu V
,
Pershin, V V
,
Ryvkin, S M
,
Yaroshetskiĭ, I D
Published in
Soviet journal of quantum electronics
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Investigations of surface polaritons in the Ag−GaAs system
by
Belyakov, L. V.
,
Goryachev, D. N.
,
Sreseli, O. M.
,
Yaroshetskii, I. D.
Published in
Acta physica hungarica
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Low-voltage device for passive mode locking of pulsed infrared lasers
by
Beregulin, E V
,
Valov, P M
,
Ganichev, S D
,
Kabakova, Z N
,
Yaroshetskiĭ, I D
Published in
Soviet journal of quantum electronics
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Porous semiconductors: why only silicon-based? A possible explanation
by
GORYACHEV, D. N
,
BELYAKOV, L. V
,
SRESELI, O. M
,
YAROSHETSKII, I. D
Published in
Semiconductor science and technology
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Fast detector for the polarization characteristics determination of the pulse IR-FIR laser-radiation
by
Andrianov, A.V.
,
Beregulin, E.V.
,
Ganichev, S.D.
,
Glookh, K.Yu
,
Yaroshetskii, I.D.
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Conference Proceeding
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A device for investigating the effect of γ-radiation on semiconductor materials
by
Konovalenko, B. M.
,
Ryvkin, S. M.
,
Yaroshetskii, I. D.
,
Bogomazov, L. P.
Published in
Atomic energy (New York, N.Y.)
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