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Search Results - Yashiro, Takehisa
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Oxidized Porous Silicon-Silicon Interface Investigation by C-V Method
by
Imai, Kazuo
,
Yashiro, Takehisa
Published in
Japanese Journal of Applied Physics
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Preparation of the Tetragonal Germanium Dioxide for the Passivation of Germanium Devices
by
Yashiro, Takehisa
,
Igarashi, Yoshitaka
,
Niimi, Tatsuya
,
Takeuchi, Satoshi
Published in
Japanese Journal of Applied Physics
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Some Properties of Vapor Deposited Ge[sub 3]N[sub 4], Films and the Ge[sub 3]N[sub 4]-Ge Interface
by
Yashiro, Takehisa
Published in
Journal of the Electrochemical Society
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Determination of Trap Levels in Ge 3 N 4 and Barrier Energies at the Ge 3 N 4 -Ge Interface by C-V Characteristics
by
Yashiro, Takehisa
Published in
Japanese Journal of Applied Physics
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Frequency and Temperature Dependence of C-V Characteristics at Ge-SiO 2 Interface and BT Treatments
by
Yashiro, Takehisa
Published in
Japanese Journal of Applied Physics
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Surface State Formation during Long-Term Bias-Temperature Stress Aging of Thin SiO 2 –Si Interfaces
by
Shiono, Noboru
,
Yashiro, Takehisa
Published in
Japanese Journal of Applied Physics
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Properties of MNMOS Structure Interposing Platinum at Si 3 N 4 –SiO 2 Interface
by
Yoshino, Hideo
,
Kiuchi, Kazuhide
,
Yashiro, Takehisa
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Japanese Journal of Applied Physics
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Effect of Platinum Particles in Dual SiO 2 Interface on Charge Storage Properties
by
Yoshino, Hideo
,
Kiuchi, Kazuhide
,
Yashiro, Takehisa
Published in
Japanese Journal of Applied Physics
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Japanese Journal Of Applied Physics, Part 1: Regular Papers And Short Notes And Review Papers
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