Interference effects in the electroreflectance and electroluminescence spectra of InGaN/AlGaN/GaN light-emitting-diode heterostructures by Avakyants, L. P., Bokov, P. Yu, Chervyakov, A. V., Chuyas, A. V., Yunovich, A. E., Vasileva, E. D., Bauman, D. A., Uelin, V. V., Yavich, B. S.

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Evolution of the deformation state and composition as a result of changes in the number of quantum wells in multilayered InGaN/GaN structures by Kladko, V. P., Kuchuk, A. V., Safriuk, N. V., Machulin, V. F., Belyaev, A. E., Konakova, R. V., Yavich, B. S., Ber, B. Ya, Kazantsev, D. Yu

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Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers by Stepanov, S., Wang, W.N., Yavich, B.S., Bougrov, V., Rebane, Y.T., Shreter, Y.G.

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X-ray diffraction analysis and scanning micro-Raman spectroscopy of structural irregularities and strains deep inside the multilayered InGaN/GaN heterostructure by Strelchuk, V. V., Kladko, V. P., Avramenko, E. A., Kolomys, O. F., Safryuk, N. V., Konakova, R. V., Yavich, B. S., Valakh, M. Ya, Machulin, V. F., Belyaev, A. E.

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Deposition behavior of GaN in AIX 200/4 RF-S horizontal reactor by Yakovlev, E.V., Talalaev, R.A., Makarov, Yu.N., Yavich, B.S., Wang, W.N

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Light Emitting Diode with Charge Asymmetric Resonance Tunneling by Rebane, Y.T., Shreter, Y.G., Yavich, B.S., Bougrov, V.E., Stepanov, S.I., Wang, W.N.

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Rapid communication Photoemission of spinpolarized electrons from strained GaAsP by Drescher, P., Andresen, H.G., Aulenbacher, K., Bermuth, J., Dombo, T., Fischer, H., Euteneuer, H., Faleev, N.N., Galaktionov, M.S., von Harrach, D., Hartmann, P., Hoffmann, J., Jennewein, P., Kaiser, K.H., Köbis, S., Kovalenkov, O.V., Kreidel, H.J., Langbein, J., Mamaev, Y.A., Nachtigall, C., Petri, M., Plützer, S., Reichert, E., Schemies, M., Schöpe, H.-J., Steffens, K.-H., Steigerwald, M., Subashiev, A.V., Trautner, H., Vinokurov, D.A., Yashin, Y.P., Yavich, B.S.

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Influence of intraband absorption on reversible bleaching of gallium arsenide under picosecond light pulse excitation by Ageeva, N.N., Borisov, V.B., Bronevoi, I.L., Mironov, V.A., Kumekov, S.E., Perel', V.I., Yavich, B.S., Gadonas, R.

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Parameters of silicon microdiodes fabricated by selective epitaxy by Drozdova, M.V., Sukhanov, V.L., Tuchkevich, V.V., Schmidt, N.M., Yavich, B.S.

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