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Improved lateral figure-of-merit of heteroepitaxial α-Ga2O3 power MOSFET using ferroelectric AlScN gate stack
by
Oh, SeungYoon
,
Yoon, SiSung
,
Lim, Yoojin
,
Lee, Gyuhyung
,
Yoo, Geonwook
Published in
Applied physics letters
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Effects of a Spike-Annealed HfO2 Gate Dielectric Layer on the On-Resistance and Interface Quality of AlGaN/GaN High-Electron-Mobility Transistors
by
Lee, Gyuhyung
,
Yang, Jeongyong
,
Yeom, Min Jae
,
Yoon, Sisung
,
Yoo, Geonwook
Published in
Electronics (Basel)
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Effects of a Spike-Annealed HfO[sub.2] Gate Dielectric Layer on the On-Resistance and Interface Quality of AlGaN/GaN High-Electron-Mobility Transistors
by
Lee, Gyuhyung
,
Yang, Jeongyong
,
Yeom, Min Jae
,
Yoon, Sisung
,
Yoo, Geonwook
Published in
Electronics (Basel)
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Ferroelectricity
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Hafnium Oxide
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Figure Of Merit
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High Electron Mobility Transistors
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