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Effects of Polycrystalline Silicon Plug Defect on DRAM Characteristics
by
Han, Dongmin
,
Hwang, Yoosang
,
Choi, Byoungdeog
Published in
IEEE transactions on electron devices
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Suppression of the Floating-Body Effect of Vertical-Cell DRAM With the Buried Body Engineering Method
by
Cho, Youngseung
,
Kim, Huijung
,
Jung, Kyungho
,
Kim, Bongsoo
,
Hwang, Yoosang
,
Hong, Hyeongsun
,
Choi, Byoungdeog
Published in
IEEE transactions on electron devices
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Novel Band-to-Band Tunneling Body Contact (BTBC) Structure to Suppress the Floating- Body Effect in a Vertical-Cell DRAM
by
Cho, Youngseung
,
Choi, Pyeongho
,
Hyeon, Younghwan
,
Song, Junhwa
,
Hwang, Yoosang
,
Choi, Byoungdeog
Published in
IEEE electron device letters
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Novel Deep Trench Buried-Body-Contact (DBBC) of 4F2 cell for sub 30nm DRAM technology
by
Youngseung Cho
,
Yoosang Hwang
,
Huijung Kim
,
Eunok Lee
,
Soojin Hong
,
Hyunwoo Chung
,
Daeik Kim
,
Jiyoung Kim
,
Yongchul Oh
,
Hyeongsun Hong
,
Gyo-Young Jin
,
Chilhee Chung
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Novel 4F2 DRAM cell with Vertical Pillar Transistor(VPT)
by
Hyunwoo Chung
,
Huijung Kim
,
Hyungi Kim
,
Kanguk Kim
,
Sua Kim
,
Ki-Whan Song
,
Jiyoung Kim
,
Yong Chul Oh
,
Yoosang Hwang
,
Hyeongsun Hong
,
Gyo-Young Jin
,
Chilhee Chung
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