Search Results - Yoshitami Terakoshi, Yoshitami Terakoshi

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  1. 1
    Reduction of Threading Dislocations in GaN on Sapphire by Buffer Layer Annealing in Low-Pressure Metalorganic Chemical Vapor Deposition

    Reduction of Threading Dislocations in GaN on Sapphire by Buffer Layer Annealing in Low-Pressure Metalorganic Chemical Vapor Deposition by Tadao Hashimoto, Tadao Hashimoto, Masaaki Yuri, Masaaki Yuri, Masahiro Ishida, Masahiro Ishida, Yoshitami Terakoshi, Yoshitami Terakoshi, Osamu Imafuji, Osamu Imafuji, Takashi Sugino, Takashi Sugino, Kunio Itoh, Kunio Itoh

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  2. 2
    Structural investigation of sapphire surface after nitridation

    Structural investigation of sapphire surface after nitridation by Hashimoto, Tadao, Terakoshi, Yoshitami, Ishida, Masahiro, Yuri, Masaaki, Imafuji, Osamu, Sugino, Takashi, Yoshikawa, Akio, Itoh, Kunio

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  3. 3
    Quantitative study of nitridated sapphire surfaces by x-ray photoelectron spectroscopy

    Quantitative study of nitridated sapphire surfaces by x-ray photoelectron spectroscopy by Hashimoto, Tadao, Terakoshi, Yoshitami, Yuri, Masaaki, Ishida, Masahiro, Imafuji, Osamu, Sugino, Takashi, Itoh, Kunio

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  4. 4
    Inheritance of zinc-blende structure from 3C-SiC/Si(001) substrate in growth of GaN by MOCVD

    Inheritance of zinc-blende structure from 3C-SiC/Si(001) substrate in growth of GaN by MOCVD by HASHIMOTO, T, IMAFUJI, O, ISHIDA, M, TERAKOSHI, Y, SUGINO, T, YOSHIKAWA, A, ITOH, K, SHIRAFUJI, J

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  5. 5
    Inheritance of zinc-blende structure from [formula omitted] substrate in growth of GaN by MOCVD

    Inheritance of zinc-blende structure from [formula omitted] substrate in growth of GaN by MOCVD by Hashimoto, Tadao, Imafuji, Osamu, Ishida, Masahiro, Terakoshi, Yoshitami, Sugino, Takashi, Yoshikawa, Akio, Itoh, Kunio, Shirafuji, Junji

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