Search Results - Youngshin Eum

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    High-temperature reverse bias characteristics of highly reliable GaN MOS-HFET

    High-temperature reverse bias characteristics of highly reliable GaN MOS-HFET by Hoshi, Shinichi, Hata, Kensuke, Eum, Youngshin, Arakawa, Kazuki, Kuzuhara, Masaaki

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    Highly reliable GaN MOS-HFET with high short-circuit capability

    Highly reliable GaN MOS-HFET with high short-circuit capability by Youngshin Eum, Oyama, Kazuhiro, Otake, Nobuyuki, Hoshi, Shinichi

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