The measurement of responsivity of infrared photodetectors using a cavity blackbody by Li, Nong, Jiang, Dongwei, Wang, Guowei, Chen, Weiqiang, Zhou, Wenguang, Jiang, Junkai, Chang, Faran, Hao, Hongyue, Wu, Donghai, Xu, Yingqiang, Shen, Guiying, Xie, Hui, Liu, Jingming, Zhao, Youwen, Wang, Fenghua, Niu, Zhichuan

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Complete Genome Sequence of Bacillus thuringiensis subsp. chinensis Strain CT-43 by He, Jin, Wang, Jieping, Yin, Wen, Shao, Xiaohu, Zheng, Huajun, Li, Mingshun, Zhao, Youwen, Sun, Ming, Wang, Shengyue, Yu, Ziniu

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Purification of metallurgical silicon through directional solidification in a large cold crucible by Liu, Tong, Dong, Zhiyuan, Zhao, Youwen, Wang, Jun, Chen, Teng, Xie, Hui, Li, Jian, Ni, Haijiang, Huo, Dianxin

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High-Power, High-Efficiency GaSb-Based Laser with Compositionally Linearly Graded AlGaAsSb Layer by Chen, Yihang, Yang, Chengao, Wang, Tianfang, Yu, Hongguang, Shi, Jianmei, Su, Xiangbin, Zhang, Yu, Zhao, Youwen, Tong, Cunzhu, Wu, Donghai, Xu, Yingqiang, Ni, Haiqiao, Niu, Zhichuan

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Impurity band conduction in Mn-doped p type InAs single crystal by Shen, Guiying, Zhao, Youwen, Bai, Yongbiao, Yu, Ding, Liu, Jingming, Xie, Hui, Dong, Zhiyuan, Yang, Jun, Yang, Fengyun, Wang, Fenghua

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Large scale purification of metallurgical silicon for solar cell by using electron beam melting by Liu, Tong, Dong, Zhiyuan, Zhao, Youwen, Wang, Jun, Chen, Teng, Xie, Hui, Li, Jian, Ni, Haijiang, Huo, Dianxin

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Investigation of native defects and property of bulk ZnO single crystal grown by a closed chemical vapor transport method by Wei, Xuecheng, Zhao, Youwen, Dong, Zhiyuan, Li, Jinmin

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Performance improvement of c-Si solar cell by a combination of SiNx/SiOx passivation and double P-diffusion gettering treatment by Xiaoyu Chen, Youwen Zhao, Zhiyuan Dong, Guiying Shen, Yongbiao Bai, Jingming Liu, Hui Xie, Jiangbian He

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Evaluation of four inch diameter VGF-Ge substrates used for manufacturing multi-junction solar cell by 曹可慰 刘彤 刘京明 谢辉 陶东言 赵有文 董志远 惠峰

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Analysis of solar cells fabricated from UMG-Si purified by a novel metallurgical method by Chen, Teng, Zhao, Youwen, Dong, Zhiyuan, Liu, Tong, Wang, Jun, Xie, Hui

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Implantation induced defects and electrical properties of Sb-implanted ZnO by Xie, Hui, Liu, Tong, Liu, JingMing, Cao, KeWei, Dong, ZhiYuan, Yang, Jun, Zhao, YouWen

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Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation by Hui, Li, Kai, Zhou, Jingbiao, Pang, Yundong, Shao, Zhu, Wang, Youwen, Zhao

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Impurities related micro-defects in GaSb crystal grown by LEC method by Liu, Jingming, Yang, Jun, Huang, Jianliang, Shen, Guiying, Xie, Hui, Wang, Fenghua, Zhao, Youwen

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Carbon agent chemical vapor transport growth of Ga2O3 crystal by 苏杰 刘彤 刘京明 杨俊 沈桂英 白永彪 董志远 赵有文

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Relation extraction: advancements through deep learning and entity-related features by Zhao, Youwen, Yuan, Xiangbo, Yuan, Ye, Deng, Shaoxiong, Quan, Jun

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Epitaxial hillocks defects caused by subsurface damage from InAs substrate by Liu, Lijie, Zhao, Youwen, Huang, Yong, Wang, Jun, Yang, Jun, Lu, Wei

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Investigation of Comet-Shaped Defects in an EPI-InP Layer Grown on S-Doped and Fe-Doped InP Substrates by Liu, Lijie, Zhao, Youwen, Liu, Jingming, Wang, Yingli, Wang, Jun, Sha, Xuechao

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Oxidation related particles on GaSb (100) substrate surfaces by Shen, Guiying, Zhao, Youwen, Liu, Jingming, Yang, Jun, Xie, Hui, He, Jianjun, Wang, Guowei

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Structural Characterization of Carbon-implanted GaSb by Shen, Guiying, Zhao, Youwen, He, Jianjun

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Evaluation of polishing induced subsurface damage in InAs substrates by an acid solution etching method by Feng, Yinhong, Shen, Guiying, Zhao, Youwen, Liu, Jingming, Yang, Jun, Xie, Hui, He, Jianjun

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