Search Results - Yuehui Yu

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  1. 41
    Large Photomultiplication by Charge-Self-Trapping for High-Response Quantum Dot Infrared Photodetectors

    Large Photomultiplication by Charge-Self-Trapping for High-Response Quantum Dot Infrared Photodetectors by Xu, Kaimin, Ke, Liang, Dou, Hongbin, Xu, Rui, Zhou, Wenjia, Wei, Qi, Sun, Xinzuo, Wang, Hao, Wu, Haobo, Li, Lin, Xue, Jiamin, Chen, Baile, Weng, Tsu-Chien, Zheng, Li, Yu, Yuehui, Ning, Zhijun

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  2. 42
    Realization of 850V breakdown voltage LDMOS on Simbond SOI

    Realization of 850V breakdown voltage LDMOS on Simbond SOI by Wang, Zhongjian, Cheng, Xinhong, He, Dawei, Xia, Chao, Xu, Dawei, Yu, Yuehui, Zhang, Dong, Wang, Yanying, Lv, Yuqiang, Gong, Dawei, Shao, Kai

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  3. 43
    Impact of the transition region between active area and edge termination on electrical performance of SiC MOSFET

    Impact of the transition region between active area and edge termination on electrical performance of SiC MOSFET by Liu, Shaoyu, Cheng, Xinhong, Zheng, Li, Sledziewski, Tomasz, Erlbacher, Tobias, Sheng, Lingyan, Yu, Yuehui

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  4. 44
    A Fin-p-GaN HEMT for High Threshold Voltage with Enhanced Stability

    A Fin-p-GaN HEMT for High Threshold Voltage with Enhanced Stability by Shen, Lingyan, Cheng, Xinhong, Zheng, Li, Yu, Yuehui

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  5. 45
    Ambipolar Graphene–Quantum Dot Phototransistors with CMOS Compatibility

    Ambipolar Graphene–Quantum Dot Phototransistors with CMOS Compatibility by Zheng, Li, Zhou, Wenjia, Ning, Zhijun, Wang, Gang, Cheng, Xinhong, Hu, Weida, Zhou, Wen, Liu, Zhiduo, Yang, Siwei, Xu, Kaimin, Luo, Man, Yu, Yuehui

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  6. 46
    Graphene-induced positive shift of the flat band voltage in recessed gate AlGaN/GaN structures

    Graphene-induced positive shift of the flat band voltage in recessed gate AlGaN/GaN structures by Liu, Xiaobo, Zheng, Li, Cheng, Xinhong, Shen, Lingyan, Liu, Shaoyu, Wang, Da, You, Jinhao, Yu, Yuehui

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  7. 47
    High-precision X-ray characterization for basic materials in modern high-end integrated circuit

    High-precision X-ray characterization for basic materials in modern high-end integrated circuit by Zhao, Weiran, Mo, Qiuqi, Zheng, Li, Li, Zhongliang, Zhang, Xiaowei, Yu, Yuehui

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  8. 48
    Direct growth of high-quality Al2O3 dielectric on graphene layers by low-temperature H2O-based ALD

    Direct growth of high-quality Al2O3 dielectric on graphene layers by low-temperature H2O-based ALD by Zhang, Youwei, Qiu, Zhijun, Cheng, Xinhong, Xie, Hong, Wang, Haomin, Xie, Xiaomin, Yu, Yuehui, Liu, Ran

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  9. 49
    Influence of preparing process on total-dose radiation response of high- k Hf-based gate dielectrics

    Influence of preparing process on total-dose radiation response of high- k Hf-based gate dielectrics by Song, Zhaorui, Cheng, Xinhong, Zhang, Enxia, Xing, Yumei, Yu, Yuehui, Zhang, Zhengxuan, Wang, Xi, Shen, Dashen

    Published in Thin solid films
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  10. 50
    Influence of LaSiOx passivation interlayer on band alignment between PEALD-Al2O3 and 4H-SiC determined by X-ray photoelectron spectroscopy

    Influence of LaSiOx passivation interlayer on band alignment between PEALD-Al2O3 and 4H-SiC determined by X-ray photoelectron spectroscopy by Wang, Qian, Cheng, Xinhong, Zheng, Li, Shen, Lingyan, Zhang, Dongliang, Gu, Ziyue, Qian, Ru, Cao, Duo, Yu, Yuehui

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  11. 51
    Properties of a Ni-FUSI gate formed by the EBV method and one-step RTA

    Properties of a Ni-FUSI gate formed by the EBV method and one-step RTA by Zhang, Youwei, Xu, Dawei, Wan, Li, Wang, Zhongjian, Xia, Chao, Cheng, Xinhong, Yu, Yuehui

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  12. 52
    Can Ultrasound Evaluation of Lymph Node Size and Necrosis Rate Predict Chemotherapy Response in Cervical Tuberculous Lymphadenitis?

    Can Ultrasound Evaluation of Lymph Node Size and Necrosis Rate Predict Chemotherapy Response in Cervical Tuberculous Lymphadenitis? by Zhang, Ying, Chen, Peijun, Yu, Tianzhuo, Yu, Yuehui, Yan, Xinyi, Chu, Jie, Yang, Gaoyi

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  13. 53
    The properties of high-k gate dielectric films deposited on HRSOI

    The properties of high-k gate dielectric films deposited on HRSOI by Cheng, Xinhong, Xu, Dapeng, Song, Zhaorui, He, Dawei, Yu, Yuehui, Zhao, Qingtai, Shen, DaShen

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  14. 54
    Influence of Poly-AlN Passivation on the Performance Improvement of 3-MeV Proton-Irradiated AlGaN/GaN MIS-HEMTs

    Influence of Poly-AlN Passivation on the Performance Improvement of 3-MeV Proton-Irradiated AlGaN/GaN MIS-HEMTs by Zhang, Dongliang, Cheng, Xinhong, Shen, Lingyan, Zheng, Li, Gu, Ziyue, Zhou, Wen, Liu, Xiaobo, Yu, Yuehui

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  15. 55
    Fluorinated Graphene in Interface Engineering of Ge-Based Nanoelectronics

    Fluorinated Graphene in Interface Engineering of Ge-Based Nanoelectronics by Zheng, Xiaohu, Zhang, Miao, Shi, Xiaohua, Wang, Gang, Zheng, Li, Yu, Yuehui, Huang, Anping, Chu, Paul K., Gao, Heng, Ren, Wei, Di, Zengfeng, Wang, Xi

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  16. 56
    Low temperature growth of three-dimensional network of graphene for high-performance supercapacitor electrodes

    Low temperature growth of three-dimensional network of graphene for high-performance supercapacitor electrodes by Zheng, Li, Cheng, Xinhong, Ye, Peiyi, Shen, Lingyan, Wang, Qian, Zhang, Dongliang, Gu, Ziyue, Zhou, Wen, Wu, Dengpeng, Yu, Yuehui

    Published in Materials letters
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  17. 57
    The effect of blocking layer of Al2O3 on thermal stability and electrical properties of HfO2 dielectric films deposited on SiGe layer

    The effect of blocking layer of Al2O3 on thermal stability and electrical properties of HfO2 dielectric films deposited on SiGe layer by Cheng, Xinhong, He, Dawei, Song, Zhaorui, Yu, Yuehui, Shen, DaShen

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  18. 58
    Experimental Study of Reversely Switched Dynistor Discharge Based on Gap Breakdown Load

    Experimental Study of Reversely Switched Dynistor Discharge Based on Gap Breakdown Load by 尚超 梁琳 余岳辉 吴拥军 李海亮

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  19. 59
    Band alignment between PEALD-AlNO and AlGaN/GaN determined by angle-resolved X-ray photoelectron spectroscopy

    Band alignment between PEALD-AlNO and AlGaN/GaN determined by angle-resolved X-ray photoelectron spectroscopy by Wang, Qian, Cheng, Xinhong, Zheng, Li, Ye, Peiyi, Li, Menglu, Shen, Lingyan, Li, Jingjie, Zhang, Dongliang, Gu, Ziyue, Yu, Yuehui

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  20. 60
    Interfacial chemistry and energy band alignment of TiAlO on 4H-SiC determined by X-ray photoelectron spectroscopy

    Interfacial chemistry and energy band alignment of TiAlO on 4H-SiC determined by X-ray photoelectron spectroscopy by Wang, Qian, Cheng, Xinhong, Zheng, Li, Ye, Peiyi, Li, Menglu, Shen, Lingyan, Li, Jingjie, Zhang, Dongliang, Gu, Ziyue, Yu, Yuehui

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