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CMOS integration of high-k/metal gate transistors in diffusion and gate replacement (D&GR) scheme for dynamic random access memory peripheral circuits
by
Litta, Eugenio Dentoni
,
Ritzenthaler, Romain
,
Schram, Tom
,
Spessot, Alessio
,
O Sullivan, Barry
,
Machkaoutsan, Vladimir
,
Fazan, Pierre
,
Ji, Yunhyuck
,
Mannaert, Geert
,
Lorant, Christophe
,
Sebaai, Farid
,
Thiam, Arame
,
Ercken, Monique
,
Demuynck, Steven
,
Horiguchi, Naoto
Published in
Japanese Journal of Applied Physics
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The study of flat-band voltage shift using arsenic ion-implantation with High-k/Metal Inserted Poly Si gate stacks
by
BeomYong Kim
,
YunHyuck Ji
,
SeungMi Lee
,
BongSeok Jeon
,
KeeJeung Lee
,
Kwon Hong
,
SungKi Park
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Japanese Journal Of Applied Physics
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Subjects
Capacitance-Voltage Characteristics
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Cmos
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Current Leakage
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Dynamic Random Access Memory
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Field Effect Transistors
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Gates
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General Engineering
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General Physics And Astronomy
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Implants
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Leakage Current
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Logic Gates
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Mos Capacitors
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Nitrogen
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Physical Sciences
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Physics
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Physics And Astronomy
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Physics, Applied
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Random Access Memory
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Science & Technology
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Semiconductor Devices
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Ieee Electronic Library (Iel) Conference Proceedings
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Ieee Xplore All Conference Series
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Institute Of Physics Iopscience Extra
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