Set/Reset Bilaterally Controllable Resistance Switching Ga‐doped Ge2Sb2Te5 Long‐Term Electronic Synapses for Neuromorphic Computing by Wang, Qiang, Luo, Ren, Wang, Yankun, Fang, Wencheng, Jiang, Luyue, Liu, Yangyang, Wang, Ruobing, Dai, Liyan, Zhao, Jinyan, Bi, Jinshun, Liu, Zenghui, Zhao, Libo, Jiang, Zhuangde, Song, Zhitang, Schwarzkopf, Jutta, Schroeder, Thomas, Wu, Shengli, Ye, Zuo‐Guang, Ren, Wei, Song, Sannian, Niu, Gang

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Thickness effect on the crystallization characteristic of RF sputtered Sb thin films by Huang, Yufeng, Wu, Weihua, Xu, Shengqing, Zhu, Xiaoqin, Song, Sannian, Song, Zhitang

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The investigations of characteristics of Sb2Te as a base phase-change material by Liu, Guangyu, Wu, Liangcai, Zhu, Min, Song, Zhitang, Rao, Feng, Song, Sannian, Cheng, Yan

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Scalability of Sulfur‐Based Ovonic Threshold Selectors for 3D Stackable Memory Applications by Jia, Shujing, Li, Huanglong, Liu, Qi, Song, Zhitang, Zhu, Min

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A Fast-Transient-Response NMOS LDO with Wide Load-Capacitance Range for Cross-Point Memory by He, Luchang, Li, Xi, Xu, Siqiu, Pan, Guochang, Xie, Chenchen, Chen, Houpeng, Song, Zhitang

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A Curvature Compensation Technique for Low-Voltage Bandgap Reference by Shen, Jie, Chen, Houpeng, Ni, Shenglan, Song, Zhitang

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Oxygen Tuned Local Structure and Phase-Change Performance of Germanium Telluride by Zhou, Xilin, Du, Yonghua, Behera, Jitendra K, Wu, Liangcai, Song, Zhitang, Simpson, Robert E

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Microscopic Mechanism of Carbon-Dopant Manipulating Device Performance in CGeSbTe-Based Phase Change Random Access Memory by Cheng, Yan, Cai, Daolin, Zheng, Yonghui, Yan, Shuai, Wu, Lei, Li, Chao, Song, Wenxiong, Xin, Tianjiao, Lv, Shilong, Huang, Rong, Lv, Hangbing, Song, Zhitang, Feng, Songlin

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Si–Sb–Te materials for phase change memory applications by Rao, Feng, Song, Zhitang, Ren, Kun, Zhou, Xilin, Cheng, Yan, Wu, Liangcai, Liu, Bo

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Enhancing Slurry Stability and Surface Flatness of Silicon Wafers through Organic Amine-Catalyzed Synthesis Silica Sol by Xing, Yi, Wang, Weilei, Liu, Weili, Song, Zhitang

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The impact of vacancies on the stability of cubic phases in Sb–Te binary compounds by Chen, Xin, Liu, Xianqiang, Cheng, Yan, Song, Zhitang

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Investigation on thermal stability of vanadium-doped Sb2Te phase change material by Wu, Liangcai, Li, Tao, Ji, Xinglong, Song, Sannian, Song, Zhitang

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Heterogeneous nucleus-induced crystallization for high-speed phase change memory applications by Liu, Guangyu, Wu, Liangcai, Zhang, Sifan, Liu, Wanliang, Lv, Shilong, Zhu, Min, Song, Sannian, Song, Zhitang

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The crystallization mechanism of zirconium-doped Sb2Te3 material for phase-change random-access memory application by Zheng, Yonghui, Qi, Ruijuan, Cheng, Yan, Song, Zhitang

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Ultrathin flexible InGaZnO transistor for implementing multiple functions with a very small circuit footprint by Dai, Chaoqi, Chen, Peiqin, Qi, Shaocheng, Hu, Yongbin, Song, Zhitang, Dai, Mingzhi

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A Self-Organizing Multi-Layer Agent Computing System for Behavioral Clustering Recognition by Qian, Xingyu, Yuemaier, Aximu, Yang, Wenchi, Chen, Xiaogang, Liang, Longfei, Li, Shunfen, Dai, Weibang, Song, Zhitang

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Simultaneous thermal stability and phase change speed improvement of Sn15Sb85 thin film through erbium doping by Zou, Hua, Zhu, Xiaoqin, Hu, Yifeng, Sui, Yongxing, Sun, Yuemei, Zhang, Jianhao, Zheng, Long, Song, Zhitang

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Low-energy phase change memory with graphene confined layer by Zhu, Chengqiu, Ma, Jun, Ge, Xiaoming, Rao, Feng, Ding, Keyuan, Lv, Shilong, Wu, Liangcai, Song, Zhitang

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Pressure-induced reversible amorphization and an amorphous–amorphous transition in Ge2Sb2Te5 phase-change memory material by Sun, Zhimei, Zhou, Jian, Pan, Yuanchun, Song, Zhitang, Mao, Ho-Kwang, Ahuja, Rajeev

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High-speed and large-window C-doped Sb-rich GeSbTe alloy for phase-change memory applications by Wu, Liangcai, Li, Tao, Liu, Wanliang, Song, Zhitang

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