Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter by Golikov, O. L., Zabavichev, I. Yu, Ivanov, A. S., Obolensky, S. V., Obolenskaya, E. S., Paveliev, D. G., Potekhin, A. A., Puzanov, A. S., Tarasova, E. A., Khazanova, S. V.

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Calculating Current–Voltage Characteristics with Negative Differential Conductivity Sections of Superlattices Based on a GaAs/AlAs Compound with Different Numbers of Periods by Khazanova, S. V., Golikov, O. L., Puzanov, A. S., Tarasova, E. A., Zabavichev, I. Yu, Potekhin, A. A., Obolenskaya, E. S., Ivanov, A. S., Paveliev, D. G., Obolensky, S. V.

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Impact of the Potential of Scattering at Radiation-Induced Defects on Carrier Transport in GaAs Structures by Zabavichev, I. Yu, Puzanov, A. S., Obolenskiy, S. V., Kozlov, V. A.

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Simulation of the Formation of a Cascade of Displacements and Transient Ionization Processes in Silicon Semiconductor Structures under Neutron Exposure by Zabavichev, I. Yu, Potehin, A. A., Puzanov, A. S., Obolenskiy, S. V., Kozlov, V. A.

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Modeling the Response of a Microwave Low-Barrier Uncooled Mott Diode to the Action of Heavy Ions of Outer Space and Femtosecond Laser Pulses by Puzanov, A. S., Bibikova, V. V., Zabavichev, I. Yu, Obolenskaya, E. S., Potekhin, A. A., Tarasova, E. A., Vostokov, N. V., Kozlov, V. A., Obolensky, S. V.

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Simulation of the Response of a Low-Barrier Mott Diode to the Influence of Heavy Charged Particles from Outer Space by Puzanov, A. S., Bibikova, V. V., Zabavichev, I. Yu, Obolenskaya, E. S., Tarasova, E. A., Vostokov, N. V., Obolenskii, S. V.

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Effect of the Measuring Signal Parameters on the Error in Capacitance Measurements of a p-n Transition and Determining Its Resistance to Radiation by Zabavichev, I. Yu, Obolensky, S. V.

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Degradation of the characteristics of GaAs bipolar transistors with a thin base due to the formation in them of nanometer-sized clusters of radiation-induced defects as a result of... by Zabavichev, I. Yu, Potekhin, A. A., Puzanov, A. S., Obolenskiy, S. V., Kozlov, V. A.

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Transport of hot charge carriers in Si, GaAs, InGaAs, and GaN submicrometer semiconductor structures with nanometer-scale clusters of radiation-induced defects by Zabavichev, I. Yu, Obolenskaya, E. S., Potekhin, A. A., Puzanov, A. S., Obolensky, S. V., Kozlov, V. A.

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Silicon-on-Insulator Structures Microtopography Transformations Features after Photonic and Corpuscular Radiation Exposure by Loginov, B. A., Blinnikov, D. Yu, Vtorova, V. S., Kirillova, V. V., Liashko, E. A., Makeev, V. S., Pervykh, A. R., Abrosimova, N. D., Zabavichev, I. Yu, Puzanov, A. S., Volkova, E. V., Tarasova, E. A., Obolensky, S. V.

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