Passive mode-locking with carbon nanotube saturable absorber in Nd:GdVO4 and Nd:Y0.9Gd0.1VO4 lasers operating at 1.34 μm by Garnov, S.V., Solokhin, S.A., Obraztsova, E.D., Lobach, A.S., Obraztsov, P.A., Chernov, A.I., Bukin, V.V., Sirotkin, A.A., Zagumennyi, Y.D., Zavartsev, Y.D., Kutovoi, S.A., Shcherbakov, I.A.

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Passive mode-locking with carbon nanotube saturable absorber in Nd:GdVO 4 and Nd:Y 0.9 Gd 0.1 VO 4 lasers operating at 1.34 μm by Garnov, S V, Solokhin, S A, Obraztsova, E D, Lobach, A S, Obraztsov, P A, Chernov, A I, Bukin, V V, Sirotkin, A A, Zagumennyi, Y D, Zavartsev, Y D, Kutovoi, S A, Shcherbakov, I A

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Spectroscopy and lasing of new mixed Nd-doped (Sc,Y)VO4 crystals by Zagumennyi, A. I., Kutovoi, S. A., Sirotkin, A. A., Kutovoi, A. A., Vlasov, V. I., Iskhakova, L. D., Zavartsev, Y. D., Luthy, W., Feurer, T.

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Diode pumped 500-picosecond Nd:GdVO4 Raman laser by Basiev, T. T., Vassiliev, S. V., Konjushkin, V. A., Osiko, V. V., Zagumennyi, A. I., Zavartsev, Y. D., Kutovoi, S. A., Shcherbakov, I. A.

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Diode-pumped quasi-three-level 456-nm Nd:GdVO4 laser by Zavartsev, Yu D, Zagumennyi, A I, Zerrouk, F, Kutovoi, S A, Mikhailov, V A, Podreshetnikov, V V, Sirotkin, A A, Shcherbakov, Ivan A

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Spectroscopic properties and lasing of Nd:Gd0.5La0.5VO4 crystals by Ostroumov, V.G, Huber, G, Zagumennyi, A.I, Zavartsev, Yu.D, Studenikin, P.A, Shcherbakov, I.A

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Spectroscopy and lasing of new mixed Nd-doped (Sc,Y)VO4 crystals by ZAGUMENNYI, A. I, KUTOVOI, S. A, SIROTKIN, A. A, KUTOVOI, A. A, VLASOV, V. I, ISKHAKOVA, L. D, ZAVARTSEV, Y. D, LUTHY, W, FEURER, T

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Thermal conductivity of a Tm3+:GdVO4 crystal and the operational characteristics of a microchip laser based on it by Zagumennyi, A I, Zavartsev, Yu D, Studenikin, P A, Vlasov, V I, Shcherbakov, Ivan A, Wyss, C P, Luthy, W, Weber, H P, Popov, P A

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Diode pumped 500-picosecond Nd:GdVO 4 Raman laser by Basiev, T T, Vassiliev, S V, Konjushkin, V A, Osiko, V V, Zagumennyi, A I, Zavartsev, Y D, Kutovoi, S A, Shcherbakov, I A

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Short-wavelength (λ = 914 nm) microlaser operating on an Nd3+:YVO4 crystal by Sychugov, V A, Mikhailov, V A, Kondratyuk, V A, Lyndin, N M, Frahm, J, Zagumennyi, A I, Zavartsev, Yu D, Studenikin, P A

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Tm3+: GdVO4 — a new efficient medium for diode-pumped 2—μm lasers by Mikhailov, V A, Zavartsev, Yu D, Zagumennyi, A I, Ostroumov, V G, Studenikin, P A, Heumann, E, Huber, G, Shcherbakov, Ivan A

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Microchip laser based on an Nd3+:GdVO4 crystal by Vlasov, V I, Zavartsev, Yu D, Zagumennyi, A I, Studenikin, P A, Shcherbakov, Ivan A, Wyss, C P, Luthy, W, Weber, H P

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Spectroscopic properties and lasing of Nd:Gd0.5La0.5 VO4 crystals by OSTROUMOV, V. G, HUBER, G, ZAGUMENNYI, A. I, ZAVARTSEV, YU. D, STUDENIKIN, P. A, SHCHERBAKOV, I. A

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Czochralski growth and characterization of (Lu1-xGdx)2SiO5 single crystals for scintillators : American crystal growth 1996 by LOUTTS, G. B, ZAGUMENNYI, A. I, LAVRISHCHEV, S. V, ZAVARTSEV, YU. D, STUDENIKIN, P. A

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A diode-pumped 1.4-w Tm3+ :GdVO4 microchip laser at 1.9 μm by WYSS, C. P, LÜTHY, W, WEBER, H. P, VLASOV, V. I, ZAVARTSEV, Y. D, STUDENIKIN, P. A, ZAGUMENNYI, A. I, SHCHERBAKOV, I. A

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Tm3+ : GdVO4 : a new efficient medium for diode-pumped 2-μm lasers by MIKHAILOV, V. A, ZAVARTSEV, YU. D, ZAGUMENNYI, A. I, OSTROUMOV, V. G, STUDENIKIN, P. A, HEUMANN, E, HUBER, G, SHCHERBAKOV, I. A

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