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Effect of atomic-arrangement matching on La2O3/Ge heterostructures for epitaxial high- k -gate-stacks
by
Kanashima, T.
,
Nohira, H.
,
Zenitaka, M.
,
Kajihara, Y.
,
Yamada, S.
,
Hamaya, K.
Published in
Journal of applied physics
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Electrical properties of epitaxial Lu- or Y-doped La 2 O 3 /La 2 O 3 /Ge high- k gate-stacks
by
Kanashima, T.
,
Yamashiro, R.
,
Zenitaka, M.
,
Yamamoto, K.
,
Wang, D.
,
Tadano, J.
,
Yamada, S.
,
Nohira, H.
,
Nakashima, H.
,
Hamaya, K.
Published in
Materials science in semiconductor processing
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Effect of atomic-arrangement matching on La{sub 2}O{sub 3}/Ge heterostructures for epitaxial high-k-gate-stacks
by
Kanashima, T.
,
Zenitaka, M.
,
Kajihara, Y.
,
Yamada, S.
,
Hamaya, K.
,
Nohira, H.
Published in
Journal of applied physics
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Article
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Electrical properties of epitaxial Lu- or Y-doped La2O3/La2O3/Ge high-k gate-stacks
by
Kanashima, T.
,
Yamashiro, R.
,
Zenitaka, M.
,
Yamamoto, K.
,
Wang, D.
,
Tadano, J.
,
Yamada, S.
,
Nohira, H.
,
Nakashima, H.
,
Hamaya, K.
Published in
Materials science in semiconductor processing
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Article
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Journal Of Applied Physics
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Materials Science In Semiconductor Processing
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American Institute Of Physics:jisc Collections:transitional Journals Agreement 2021-23 (Reading List)
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Sciencedirect®
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Sciencedirect Freedom Collection 2022-2024
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Aip Digital Archive
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American Institute Of Physics(アメリカ物理学協会)
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