Search Results - Zhang, Jon Qingchun

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  1. 1
    Design and technology considerations for SiC bipolar devices: BJTs, IGBTs, and GTOs

    Design and technology considerations for SiC bipolar devices: BJTs, IGBTs, and GTOs by Zhang, Qingchun (Jon), Agarwal, Anant K.

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  2. 2
    Physical phenomena affecting performance and reliability of 4H–SiC bipolar junction transistors

    Physical phenomena affecting performance and reliability of 4H–SiC bipolar junction transistors by Muzykov, Peter G., Kennedy, Robert M., Zhang, Qingchun (Jon), Capell, Craig, Burk, Al, Agarwal, Anant, Sudarshan, Tangali S.

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  3. 3
    Wider SOA SGT MOSFET With Self-Adjusting Negative Feedback by Patterning the Varied Resistance of Source

    Wider SOA SGT MOSFET With Self-Adjusting Negative Feedback by Patterning the Varied Resistance of Source by Ye, Jun, Mo, Weiye, Xiao, Xuan, Liu, Haonan, Song, Yang, Huang, Wei, Zhang, Debin, Li, Liang, Ma, Hongping, Zhang, Qingchun Jon, Zhang, D. W.

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  4. 4
    SiC Power Devices for Microgrids

    SiC Power Devices for Microgrids by Zhang, Qingchun, Callanan, Robert, Das, M. K., Ryu, Sei-Hyung, Agarwal, Anant K., Palmour, John W.

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  5. 5
    Failure mechanism of 4H-SiC junction barrier Schottky diodes under harsh thermal cycling stress

    Failure mechanism of 4H-SiC junction barrier Schottky diodes under harsh thermal cycling stress by Zhang, Yuan-Lan, Zhang, Jie, Ma, Hong-Ping, Chi, Yan-Qing, Tian, Hao-Ran, Liu, Jian-Hua, Liu, Qi-Bin, Chen, Zhong-Guo, Zhang, Qingchun Jon

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  6. 6
    Impact of an annealing atmosphere on band-alignment of a plasma-enhanced atomic layer deposition-grown Ga2O3/SiC heterojunction

    Impact of an annealing atmosphere on band-alignment of a plasma-enhanced atomic layer deposition-grown Ga2O3/SiC heterojunction by Shen, Yi, Wang, An-Feng, Ma, Hong-Ping, Qi, Xin, Yuan, Qilong, Yang, Mingyang, Qiu, Mengting, Zhang, Bingxue, Jiang, Nan, Zhang, Qingchun Jon

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  7. 7
    4H–SiC BJTs with current gain of 110

    4H–SiC BJTs with current gain of 110 by Zhang, Qingchun (Jon), Agarwal, Anant, Burk, Al, Geil, Bruce, Scozzie, Charles

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  8. 8
    Latest results on 1200 V 4H-SiC CIMOSFETs with Rsp, on of 3.9 mΩ·cm2 at 150°C

    Latest results on 1200 V 4H-SiC CIMOSFETs with Rsp, on of 3.9 mΩ·cm2 at 150°C by Zhang, Qingchun Jon, Gangyao Wang, Doan, Huy, Sei-Hyung Ryu, Hull, Brett, Young, Jonathan, Allen, Scott, Palmour, John

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  9. 9
    4H-SiC bipolar junction transistors: From research to development - A case study: 1200 V, 20 A, stable SiC BJTs with high blocking yield

    4H-SiC bipolar junction transistors: From research to development - A case study: 1200 V, 20 A, stable SiC BJTs with high blocking yield by Qingchun Zhang, Burk, A., Husna, F., Callanan, R., Agarwal, A., Palmour, J., Stahlbush, R., Scozzie, C.

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  10. 10
    Ultrasonic Thick Wire Bonding Process Simulation and Validation for Silicon Carbide Power Devices

    Ultrasonic Thick Wire Bonding Process Simulation and Validation for Silicon Carbide Power Devices by Liu, Pan, Li, Liangtao, Zeng, Zejun, Zhang, Guoqi, Liu, Pengfei, Zhang, Jon Qingchun, Zhang, Jing

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  11. 11
    New Improvement Results on 7.5 kV 4H-SiC p-IGBTs with Rdiff, on of 26 mΩ·cm2 at 25°C

    New Improvement Results on 7.5 kV 4H-SiC p-IGBTs with Rdiff, on of 26 mΩ·cm2 at 25°C by Oingchun Zhang, Jonas, C., Callanan, R., Sumakeris, J., Das, M., Agarwal, A., Palmour, J., Sei-Hyung Ryu, Jun Wang, Alex Huang

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